RTU002P02T106 Rohm Semiconductor, RTU002P02T106 Datasheet - Page 2
![MOSFET P-CH 20V 250MA SOT-323](/photos/5/24/52429/sc-70-3_umd3_sml.jpg)
RTU002P02T106
Manufacturer Part Number
RTU002P02T106
Description
MOSFET P-CH 20V 250MA SOT-323
Manufacturer
Rohm Semiconductor
Datasheet
1.RTU002P02T106.pdf
(3 pages)
Specifications of RTU002P02T106
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.5 Ohm @ 250mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
250mA
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
50pF @ 10V
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Transistor Polarity
P Channel
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
1ohm
Rds(on) Test Voltage Vgs
-4.5V
Voltage Vgs Max
-12V
Transistor Case Style
SOT-323
No. Of Pins
3
Svhc
No SVHC
Configuration
Single
Resistance Drain-source Rds (on)
1.5 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
0.25 A
Power Dissipation
200 mW
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
RTU002P02T106TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RTU002P02T106
Manufacturer:
ROHM
Quantity:
60 000
Transistors
∗Pulsed
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Forward voltage
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-drain) (Ta=25°C)
Parameter
Parameter
V
Symbol
Symbol
R
V
(BR) DSS
t
t
C
I
I
C
V
GS (th)
DS (on)
C
d (on)
d (off)
Y
GSS
DSS
t
t
oss
SD
iss
rss
r
fs
f
∗
∗
∗
∗
∗
∗
Min.
−0.7
Min.
−20
0.2
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ.
Typ.
1.0
1.1
2.0
50
35
45
−
−
−
−
−
5
5
9
6
−
Max.
Max.
−2.0
−1.2
±10
1.5
1.6
3.0
−1
−
−
−
−
−
−
−
−
−
Unit
Unit
µA
µA
pF
pF
pF
ns
ns
ns
ns
Ω
Ω
Ω
V
V
S
V
V
I
V
V
I
I
I
V
V
V
f=1MHz
V
I
V
R
R
I
D
D
D
D
D
S
GS
DS
DS
DS
DS
GS
DD
GS
L
G
= −0.1A, V
= −1mA, V
= −0.25A, V
= −0.25A, V
= −0.15A, V
= −0.15A
= 100Ω
= 10Ω
= −20V, V
= −10V, I
= −10V, I
= −10V
= ±12V, V
= 0V
= −4.5V
−15 V
Conditions
Conditions
GS
GS
D
D
GS
GS
GS
GS
DS
= −1mA
= −0.15A
=0V
=0V
=0V
=0V
= −4.5V
= −4V
= −2.5V
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