RTU002P02T106 Rohm Semiconductor, RTU002P02T106 Datasheet - Page 2

• Manufacturer Part Number: RTU002P02T106
• Description: MOSFET P-CH 20V 250MA SOT-323
• Manufacturer: Rohm Semiconductor

Specifications of RTU002P02T106

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 250mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 250mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 50pF @ 10V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Transistor Polarity: P Channel
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 1ohm
• Rds(on) Test Voltage Vgs: -4.5V
• Voltage Vgs Max: -12V
• Transistor Case Style: SOT-323
• No. Of Pins: 3
• Svhc: No SVHC
• Configuration: Single
• Resistance Drain-source Rds (on): 1.5 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.25 A
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: RTU002P02T106TR

Transistors
∗Pulsed
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Forward voltage
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-drain) (Ta=25°C)
Parameter
Parameter
V
Symbol
Symbol
R
V
(BR) DSS
t
t
C
I
I
C
V
GS (th)
DS (on)
C
d (on)
d (off)
Y
GSS
DSS
t
t
oss
SD
iss
rss
r
fs
f
∗
∗
∗
∗
∗
∗
Min.
−0.7
Min.
−20
0.2
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ.
Typ.
1.0
1.1
2.0
50
35
45
−
−
−
−
−
5
5
9
6
−
Max.
Max.
−2.0
−1.2
±10
1.5
1.6
3.0
−1
−
−
−
−
−
−
−
−
−
Unit
Unit
µA
µA
pF
pF
pF
ns
ns
ns
ns
Ω
Ω
Ω
V
V
S
V
V
I
V
V
I
I
I
V
V
V
f=1MHz
V
I
V
R
R
I
D
D
D
D
D
S
GS
DS
DS
DS
DS
GS
DD
GS
L
G
= −0.1A, V
= −1mA, V
= −0.25A, V
= −0.25A, V
= −0.15A, V
= −0.15A
= 100Ω
= 10Ω
= −20V, V
= −10V, I
= −10V, I
= −10V
= ±12V, V
= 0V
= −4.5V
−15 V
Conditions
Conditions
GS
GS
D
D
GS
GS
GS
GS
DS
= −1mA
= −0.15A
=0V
=0V
=0V
=0V
= −4.5V
= −4V
= −2.5V
RTU002P02
2/2