PMV40UN,215 NXP Semiconductors, PMV40UN,215 Datasheet - Page 3

MOSFET N-CH 30V 4.9A SOT-23

PMV40UN,215

Manufacturer Part Number
PMV40UN,215
Description
MOSFET N-CH 30V 4.9A SOT-23
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of PMV40UN,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
47 mOhm @ 2A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4.9A
Vgs(th) (max) @ Id
700mV @ 1mA
Gate Charge (qg) @ Vgs
9.3nC @ 4.5V
Input Capacitance (ciss) @ Vds
445pF @ 30V
Power - Max
1.9W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.047 Ohm @ 4.5 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
4.9 A
Power Dissipation
1900 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-2355-2
934057952215
PMV40UN T/R
PMV40UN T/R
Philips Semiconductors
9397 750 11668
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
(A)
I D
T
P
P der
10 -1
10 -2
(%)
10 2
sp
120
der
10
80
40
1
0
function of solder point temperature.
= 25 C; I
10 -1
0
=
---------------------- -
P
tot 25 C
P
DM
tot
50
is single pulse; V
Limit R DSon = V DS / I D
100%
100
GS
= 4.5 V
150
T sp ( C)
1
03aa17
200
Rev. 01 — 05 August 2003
DC
Fig 2. Normalized continuous drain current as a
I
I der
(%)
der
120
80
40
0
function of solder point temperature.
=
0
-------------------
I
D 25 C
10
I
D
50
TrenchMOS™ ultra low level FET
100%
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
100
V DS (V)
t p = 10 s
100 s
1 ms
10 ms
100 ms
PMV40UN
150
T sp ( C)
03an54
03aa25
10 2
200
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