QS5U17TR Rohm Semiconductor, QS5U17TR Datasheet
QS5U17TR
Specifications of QS5U17TR
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QS5U17TR Summary of contents
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Transistors 2.5V Drive Nch+SBD MOS FET QS5U17 Structure Silicon N-channel MOSFET Schottky Barrier DIODE Features 1) The QS5U17 combines Nch MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) Low on-state resistance with fast switching. 3) Low ...
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Transistors Absolute maximum ratings (Ta=25°C) <MOSFET> Parameter Drain-source voltage Gate-source voltage Continuous Drain current Pulsed Continuous Source current (Body diode) Pulsed Channel temperature Power dissipation <Di> Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature ...
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Transistors Electrical characteristic curves <MOSFET> 10 =10V V DS Pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 0.01 0.001 0.0 0.5 1.0 1.5 2.0 2.5 GATE-SOURCE VOLTAGE : V (V) GS Fig.1 Typical Transfer Characteristics 1000 =2. Pulsed ...
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Transistors 6 Ta=25°C =15V =10Ω Pulsed TOTAL GATE CHARGE : Qg (nC) Fig.10 Dynamic Input Characteristics Measurement circuits D.U.T. ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...