QS5U17TR Rohm Semiconductor, QS5U17TR Datasheet - Page 2
![MOSFET N-CH 30V 2A TSMT5](/photos/5/48/54817/tsmt5_tsmt5_pkg_sml.jpg)
QS5U17TR
Manufacturer Part Number
QS5U17TR
Description
MOSFET N-CH 30V 2A TSMT5
Manufacturer
Rohm Semiconductor
Datasheet
1.QS5U17TR.pdf
(5 pages)
Specifications of QS5U17TR
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
100 mOhm @ 2A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
1.5V @ 1mA
Gate Charge (qg) @ Vgs
3.9nC @ 4.5V
Input Capacitance (ciss) @ Vds
175pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
TSMT5
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohm @ 4.5 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
2 A
Power Dissipation
1250 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
QS5U17TR
Manufacturer:
ATMEL
Quantity:
165
Transistors
∗Pulsed
<MOSFET>
Drain-source voltage
Gate-source voltage
Drain current
Channel temperature
Power dissipation
<Di>
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
<MOSFET AND Di>
Total power dissipation
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz
<MOSFET>
<Body diode (source-drain)>
<Di>
Forward voltage
Reverse current
Source current
(Body diode)
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
Gate-drain
Forward voltage
∗ Pulsed
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
Parameter
charge
charge
Parameter
Continuous
Pulsed
Continuous
Pulsed
•
1cyc. ∗3 Mounted on a ceramic board
V
Symbol
R
V
(BR) DSS
t
t
C
I
I
C
V
GS (th)
DS (on)
C
d (on)
d (off)
Q
Q
Y
GSS
DSS
Q
V
I
t
t
oss
SD
R
iss
rss
r
gd
fs
f
gs
F
g
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
Min.
0.5
1.5
30
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Symbol
V
V
Tstg
Tch
V
I
I
I
P
V
FSM
P
P
Tj
DSS
GSS
I
I
I
DP
SP
RM
D
S
F
D
R
D
D
Typ.
110
175
2.8
0.6
0.8
71
76
50
25
10
21
−
−
−
−
−
8
8
−
−
−
∗1
∗1
∗3
∗2
∗3
∗3
Max.
0.45
200
100
107
154
1.2
1.5
3.9
−55 to +150
10
−
1
−
−
−
−
−
−
−
−
−
−
Limits
±2.0
±8.0
1.25
150
150
0.8
3.2
0.9
1.0
3.0
0.7
30
12
25
20
Unit
mΩ
mΩ
mΩ
µA
µA
pF
pF
pF
nC
nC
nC
µA
ns
ns
ns
ns
V
V
S
V
V
V
I
V
V
I
I
I
V
V
V
f=1MHz
I
V
V
R
R
V
V
I
I
V
D
D
D
D
D
D
I
F
S
R
GS
DS
DS
DS
DS
GS
DD
GS
L
G
DD
GS
=1.0A
=1mA, / V
=2.0A, V
=2.0A, V
=2.0A, V
=1.0A
=2.0A
W/ELEMENT
W/ELEMENT
=3.2A / V
W / TOTAL
=15Ω
=20V
=10Ω
=30V / V
=10V / I
=10V, I
=10V
=12V / V
=0V
=4.5V
=4.5V
15V
15 V
Unit
°C
°C
°C
V
V
A
A
A
A
V
V
A
A
Conditions
GS
GS
GS
D
D
GS
GS
=2.0A
DS
=1mA
=4.5V
=4V
=2.5V
GS
=0V
=0V
=0V
=0V
Rev.B
QS5U17
2/4