PSMN4R0-30YL,115 NXP Semiconductors, PSMN4R0-30YL,115 Datasheet - Page 5

• Manufacturer Part Number: PSMN4R0-30YL,115
• Description: MOSFET N-CH 30V 100A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN4R0-30YL,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 36.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 2090pF @ 12V
• Power - Max: 69W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 69 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4683-2; 934063074115; PSMN4R0-30YL T/R

NXP Semiconductors
6. Characteristics
Table 6.
Tested to JEDEC standards where applicable.
PSMN4R0-30YL
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
R
Dynamic characteristics
Q
Q
Q
Q
Q
V
C
C
C
t
t
t
t
DSS
GSS
d(on)
r
d(off)
f
(BR)DSS
GS(th)
GS(pl)
DSon
G
iss
oss
rss
G(tot)
GS
GS(th)
GS(th-pl)
GD
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
gate resistance
total gate charge
gate-source charge
pre-threshold gate-source
charge
post-threshold gate-source
charge
gate-drain charge
gate-source plateau voltage
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
All information provided in this document is subject to legal disclaimers.
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
V
see
V
f = 1 MHz
I
see
I
see
I
I
see
V
see
V
T
V
R
D
D
D
D
D
D
D
D
D
Rev. 04 — 10 March 2011
j
DS
DS
GS
GS
GS
GS
GS
DS
DS
DS
G(ext)
= 25 °C; see
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 10 A; V
= 10 A; V
= 0 A; V
= 10 A; V
Figure
Figure 12
Figure 12
Figure 13
Figure
Figure
Figure
Figure 15
= 30 V; V
= 30 V; V
= 12 V; see
= 12 V; V
= 12 V; R
= 16 V; V
= -16 V; V
= 4.5 V; I
= 10 V; I
= 10 V; I
= 4.7 Ω
DS
11; see
14; see
14; see
14; see
DS
DS
DS
DS
DS
DS
D
D
D
= 0 V; V
GS
GS
GS
L
DS
N-channel 30 V 4 mΩ logic level MOSFET in LFPAK
GS
GS
DS
= 15 A; T
= 15 A; T
= 12 V; V
= 12 V; V
= 12 V; V
= 0.5 Ω; V
= V
= V
= V
= 15 A; T
Figure 16
Figure
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; f = 1 MHz;
= 0 V; T
= 0 V; T
= 0 V; T
GS
GS
GS
Figure 12
Figure 15
Figure 15
Figure 15
; T
; T
; T
GS
14;
j
j
j
j
j
GS
GS
GS
= 10 V
j
j
j
j
= 25 °C;
= 150 °C;
= -55 °C;
= 150 °C;
= 25 °C
j
j
GS
j
= 25 °C
= 25 °C
= 150 °C
= 25 °C
= 25 °C
= -55 °C
= 25 °C
= 10 V;
= 4.5 V;
= 4.5 V;
= 4.5 V;
PSMN4R0-30YL
Min
30
27
1.3
0.65
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
1.7
-
-
-
-
-
-
3.73
-
2.72
0.52
36.6
17.6
33
5.6
3.6
2
4.3
2.3
2090
469
227
28
51
44
18
© NXP B.V. 2011. All rights reserved.
-
Max
-
-
2.15
-
2.45
1
100
100
100
5.25
7
4
1.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
Ω
nC
nC
nC
nC
nC
nC
nC
V
pF
pF
pF
ns
ns
ns
ns
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