2N7002 STMicroelectronics, 2N7002 Datasheet - Page 3

• Manufacturer Part Number: 2N7002
• Description: MOSFET N-CH 60V 200MA SOT-23-3
• Manufacturer: STMicroelectronics
• Series: STripFET™r
• Type: Power MOSFETr

Specifications of 2N7002

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 200mA
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 2nC @ 5V
• Input Capacitance (ciss) @ Vds: 43pF @ 25V
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.6 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 18 V
• Continuous Drain Current: 0.2 A
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Current, Drain: 0.2 A
• Gate Charge, Total: 1.4 nC
• Package Type: SOT-23-3L
• Polarization: N-Channel
• Resistance, Drain To Source On: 1.8 Ohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 7 ns
• Time, Turn-on Delay: 5 ns
• Transconductance, Forward: 0.6 S
• Voltage, Breakdown, Drain To Source: 60 V
• Voltage, Forward, Diode: 1.2 V
• Voltage, Gate To Source: ±18 V
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 5Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±18V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3111-2

Electrical characteristics
2
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Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
V
Symbol
Symbol
CASE
R
V
(BR)DSS
g
t
t
I
I
C
DS(on)
C
GS(th)
C
Q
d(on)
d(off)
Q
DSS
GSS
fs
Q
oss
t
t
rss
iss
gs
gd
r
f
g
(1)
= 25 °C unless otherwise specified)
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
I
V
V
T
V
V
V
V
V
V
V
V
R
(see
V
V
(see
D
C
DS
DS
GS
DS
GS
GS
DS
DS
GS
DD
DD
GS
G
= 250 µA, V
= 125 °C
= 4.7 Ω V
= max rating
= max rating,
= ± 18 V
= V
= 10 V, I
= 4.5 V, I
= 10 V
= 25 V, f = 1 MHz,
= 0
= 5 V
= 30 V, I
= 30 V, I
Figure
Figure
Test conditions
Test conditions
GS
, I
,
16)
17)
D
D
I
D
D
GS
D
D
GS
= 250 µA
= 0.5 A
= 0.5 A
= 1 A,
= 0.5 A
= 0.5 A
= 4.5 V
=0
Min.
Min.
60
1
Typ.
Typ.
0.6
1.4
0.8
0.5
2.1
1.8
43
20
15
6
5
7
8
2
2N7000, 2N7002
Max.
Max.
±100
5.3
10
2
1
3
5
Unit
Unit
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
µA
µA
nA
S
Ω
Ω
V
V