STN1NK60Z STMicroelectronics, STN1NK60Z Datasheet - Page 3

• Manufacturer Part Number: STN1NK60Z
• Description: MOSFET N-CH 600V 300MA SOT223
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STN1NK60Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15 Ohm @ 400mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 6.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 94pF @ 25V
• Power - Max: 3.3W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 15 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.5 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 0.3 A
• Power Dissipation: 3300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3523-2

STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z
1
Electrical ratings
Table 2.
1. Pulse width limited by safe operating area
2. I
Table 3.
1. When mounted on 1 inch² FR-4 board, 2 Oz Cu
Table 4.
V
Symbol
Symbol
R
Symbol
dv/dt
ESD(G-D)
R
I
SD
P
DM
R
V
thj-case
V
T
thj-lead
E
T
I
I
TOT
I
GS
thj-a
T
DS
stg
AR
D
D
AS
≤ 0.3A, di/dt ≤ 200A/µs, V
J
(1)
l
(2)
Absolute maximum ratings
Thermal resistance
Avalanche data
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Gate source ESD(HBM-C=100pF, R=1.5KΩ)
Peak diode recovery voltage slope
Operating junction temperature
Storage temperature
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Thermal resistance junction-lead Max
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
DD
=80%V
Parameter
Parameter
C
= 25°C
Parameter
GS
(BR)DSS
= 0)
C
C
=100°C
= 25°C
IPAK
0.24
IPAK
0.8
0.5
3.2
25
100
275
--
5
-55 to 150
TO-92
0.25
Value
TO-92
0.3
± 30
600
800
3
4.5
Value
120
40
--
0.189
1.2
Value
260
0.8
SOT-223
60
Electrical ratings
SOT-223
0.26
37.87
0.3
3.3
--
--
(1)
W/°C
Unit
V/ns
°C/W
°C/W
°C/W
°C
Unit
W
V
V
A
A
A
V
Unit
°C
mJ
A
3/16