STN3NF06 STMicroelectronics, STN3NF06 Datasheet - Page 4

• Manufacturer Part Number: STN3NF06
• Description: MOSFET N-CH 60V 4A SOT-223
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STN3NF06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 315pF @ 25V
• Power - Max: 3.3W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.07 Ohms
• Forward Transconductance Gfs (max / Min): 3 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4 A
• Power Dissipation: 3.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4764-2

Electrical characteristics
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Electrical characteristics
(T
Table 3.
Table 4.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Table 5.
V
Symbol
Symbol
Symbol
R
CASE
V
(BR)DSS
g
C
t
t
I
I
C
DS(on)
C
Q
Q
GS(th)
d(on)
d(off)
GSS
fs
DSS
Q
oss
t
rss
t
iss
gd
gs
r
f
g
(1)
=25°C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
rise time
Turn-off delay time
fall time
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Switching times
DS
= 0)
Parameter
Parameter
GS
Parameter
= 0)
V
V
V
V
(see Figure 14)
I
V
V
V
V
V
D
GS
DS
DS
DD
GS
GS
DS
DS
DS
= 250 µA, V
= 15V, I
=48V, I
V
R
(see Figure 13)
V
R
(see Figure 13)
=25V, f=1 MHz, V
=10V
= V
= 10V, I
= Max rating,
= Max rating @125°C
= ±20V
Test conditions
Test conditions
DD
DD
G
G
=4.7Ω, V
=4.7Ω, V
GS
Test conditions
=30 V, I
=30 V, I
, I
D
D
D
D
=1.5A
= 3A
= 1.5A
= 250µA
GS
D
D
GS
GS
=1.5A,
=1.5A,
= 0
=10V
=10V
GS
=0
Min.
Min.
60
2
Min.
Typ.
0.07
Typ.
315
3.5
3.5
3
70
30
10
Typ.
3
18
17
7
6
±
Max.
0.10
Max.
Max.
10
100
13
1
4
STN3NF06
Unit
Unit
Unit
nC
nC
nC
µA
µA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
Ω
S