STS25NH3LL STMicroelectronics, STS25NH3LL Datasheet - Page 4

• Manufacturer Part Number: STS25NH3LL
• Description: MOSFET N-CH 30V 25A 8-SOIC
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STS25NH3LL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 12.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4450pF @ 25V
• Power - Max: 3.2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2474-2

Electrical characteristics
4/11
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
d(on)
d(off)
RRM
I
SD
Q
SD
t
t
t
rr
r
f
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
V
R
Figure 13
I
I
di/dt = 100 A/µs,
V
Figure 18
SD
SD
DD
G
DD
= 4.7 Ω, V
= 25 A, V
= 25 A,
= 15 V, I
Test conditions
Test conditions
= 25 V, T
D
GS
GS
J
= 12.5 A,
= 150 °C
= 0
= 10 V
Min.
Min
Typ.
Typ.
2.1
18
50
75
32
34
8
STS25NH3LL
Max.
Max
100
1.3
25
Unit
Unit
nC
ns
ns
ns
ns
ns
A
A
V
A