IRFU220NPBF International Rectifier, IRFU220NPBF Datasheet - Page 2
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IRFU220NPBF
Manufacturer Part Number
IRFU220NPBF
Description
MOSFET N-CH 200V 5A I-PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRFU220NPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 2.9A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 10V
Input Capacitance (ciss) @ Vds
300pF @ 25V
Power - Max
43W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Channel Type
N
Current, Drain
5 A
Gate Charge, Total
15 nC
Package Type
I-Pak (TO-251AA)
Polarization
N-Channel
Power Dissipation
43 W
Resistance, Drain To Source On
0.6 Ohm
Resistance, Thermal, Junction To Case
3.5 °C/W
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
20 ns
Time, Turn-on Delay
6.4 ns
Transconductance, Forward
2.6 S
Voltage, Breakdown, Drain To Source
200 V
Voltage, Drain To Source
200 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
5 A
Mounting Style
SMD/SMT
Gate Charge Qg
15 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFU220NPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFU220NPBF
Manufacturer:
IR
Quantity:
20 000
Diode Characteristics
Dynamic @ T
Avalanche Characteristics
Thermal Resistance
Static @ T
R
E
I
E
R
R
R
V
∆V
V
I
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
t
AR
DSS
GSS
d(on)
r
d(off)
f
SM
S
rr
on
2
fs
AS
AR
(BR)DSS
DS(on)
GS(th)
θJC
θJA
θJA
gs
gd
iss
oss
rss
oss
oss
oss
SD
g
rr
(BR)DSS
eff.
/∆T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
Parameter
–––
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
2.0
2.6
Min. Typ. Max. Units
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
0.23
–––
–––
–––
–––
–––
–––
––– -100
–––
300
300
–––
–––
–––
320
2.4
6.1
6.4
15
11
20
12
53
15
23
46
90
–––
–––
600
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
140
480
4.0
3.6
9.2
1.3
25
23
5.0
20
V/°C
mΩ
µA
nA
nC
ns
nC
pF
ns
V
V
S
V
Typ.
Typ.
–––
–––
–––
–––
–––
–––
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
Reference to 25°C, I
I
D
D
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
GS
J
J
G
= 2.9A
= 2.9A
= 25°C, I
= 25°C, I
= 24Ω
= V
= 200V, V
= 160V, V
= 50V, I
= 160V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V,
= 100V
= 10V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
DS
DS
Conditions
= 250µA
Conditions
Conditions
= 2.9A, V
= 2.9A
= 250µA
= 2.9A
= 2.9A
GS
GS
= 0V to 160V
Max.
Max.
= 1.0V, ƒ = 1.0MHz
= 160V, ƒ = 1.0MHz
110
2.9
4.3
3.5
46
50
= 0V
= 0V, T
www.irf.com
D
= 1mA
GS
J
G
= 0V
= 150°C
Units
Units
S
°C/W
+L
mJ
mJ
A
D
S
D
)