IRFU220NPBF International Rectifier, IRFU220NPBF Datasheet - Page 3
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IRFU220NPBF
Manufacturer Part Number
IRFU220NPBF
Description
MOSFET N-CH 200V 5A I-PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRFU220NPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 2.9A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 10V
Input Capacitance (ciss) @ Vds
300pF @ 25V
Power - Max
43W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Channel Type
N
Current, Drain
5 A
Gate Charge, Total
15 nC
Package Type
I-Pak (TO-251AA)
Polarization
N-Channel
Power Dissipation
43 W
Resistance, Drain To Source On
0.6 Ohm
Resistance, Thermal, Junction To Case
3.5 °C/W
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
20 ns
Time, Turn-on Delay
6.4 ns
Transconductance, Forward
2.6 S
Voltage, Breakdown, Drain To Source
200 V
Voltage, Drain To Source
200 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
5 A
Mounting Style
SMD/SMT
Gate Charge Qg
15 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFU220NPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFU220NPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
0.01
100
100
Fig 3. Typical Transfer Characteristics
0.1
0.1
Fig 1. Typical Output Characteristics
10
10
1
1
0.1
4.0
TOP
BOTTOM
V
5.0
V
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
6.0
1
7.0
4.5V
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
J
DS
T = 25 C
8.0
10
J
= 50V
T = 175 C
J
°
°
9.0
°
10.0
100
100
0.1
Fig 2. Typical Output Characteristics
10
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
0.1
Fig 4. Normalized On-Resistance
-60 -40 -20 0
TOP
BOTTOM
I =
D
V
4.8A
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
T , Junction Temperature ( C)
Vs. Temperature
J
, Drain-to-Source Voltage (V)
1
20 40 60 80 100 120 140 160 180
20µs PULSE WIDTH
T = 175 C
J
4.5V
10
°
V
°
GS
=
10V
3
100