IRFU220NPBF International Rectifier, IRFU220NPBF Datasheet - Page 5

• Manufacturer Part Number: IRFU220NPBF
• Description: MOSFET N-CH 200V 5A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFU220NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Input Capacitance (ciss) @ Vds: 300pF @ 25V
• Power - Max: 43W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Channel Type: N
• Current, Drain: 5 A
• Gate Charge, Total: 15 nC
• Package Type: I-Pak (TO-251AA)
• Polarization: N-Channel
• Power Dissipation: 43 W
• Resistance, Drain To Source On: 0.6 Ohm
• Resistance, Thermal, Junction To Case: 3.5 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 20 ns
• Time, Turn-on Delay: 6.4 ns
• Transconductance, Forward: 2.6 S
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Drain To Source: 200 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 15 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFU220NPBF

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0.01
5.0
4.0
3.0
2.0
1.0
0.0
0.1
0.000001
10
1
Fig 9. Maximum Drain Current Vs.
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
T , Case Temperature ( C)
C
75
(THERMAL RESPONSE)
0.00001
SINGLE PULSE
100
125
°
t , Rectangular Pulse Duration (sec)
150
1
0.0001
175
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
0.001
t
d(on)
1. Duty factor D = t / t
2. Peak T = P
Notes:
t
r
J
≤ 0.1 %
≤ 1
DM
x Z
0.01
1
thJC
P
2
t
DM
d(off)
+ T
C
t
1
t
f
t
2
+
-
5
0.1