IRFU220NPBF International Rectifier, IRFU220NPBF Datasheet - Page 4
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IRFU220NPBF
Manufacturer Part Number
IRFU220NPBF
Description
MOSFET N-CH 200V 5A I-PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRFU220NPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 2.9A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 10V
Input Capacitance (ciss) @ Vds
300pF @ 25V
Power - Max
43W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Channel Type
N
Current, Drain
5 A
Gate Charge, Total
15 nC
Package Type
I-Pak (TO-251AA)
Polarization
N-Channel
Power Dissipation
43 W
Resistance, Drain To Source On
0.6 Ohm
Resistance, Thermal, Junction To Case
3.5 °C/W
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
20 ns
Time, Turn-on Delay
6.4 ns
Transconductance, Forward
2.6 S
Voltage, Breakdown, Drain To Source
200 V
Voltage, Drain To Source
200 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
5 A
Mounting Style
SMD/SMT
Gate Charge Qg
15 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFU220NPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFU220NPBF
Manufacturer:
IR
Quantity:
20 000
10000
4
1000
100
10
100
0.1
1
10
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.4
1
Drain-to-Source Voltage
T = 175 C
J
V
V DS , Drain-to-Source Voltage (V)
SD
Forward Voltage
0.6
,Source-to-Drain Voltage (V)
°
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
10
Ciss
Coss
Crss
0.8
T = 25 C
J
f = 1 MHZ
100
°
1.0
V
GS
SHORTED
= 0 V
1.2
1000
100
0.1
Fig 8. Maximum Safe Operating Area
20
16
12
10
8
4
0
1
0
1
Fig 6. Typical Gate Charge Vs.
I =
T
T
Single Pulse
D
C
J
= 25 C
= 175 C
2.9A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
DS
°
Q , Total Gate Charge (nC)
5
°
G
, Drain-to-Source Voltage (V)
10
10
BY R
V
V
V
DS
DS
DS
DS(on)
= 160V
= 100V
= 40V
FOR TEST CIRCUIT
15
SEE FIGURE
www.irf.com
100
10us
100us
1ms
10ms
20
13
1000
25