STP27N3LH5 STMicroelectronics, STP27N3LH5 Datasheet - Page 7
![MOSFET N-CH 30V 27A TO220](/photos/19/8/190856/4243257_sml.jpg)
STP27N3LH5
Manufacturer Part Number
STP27N3LH5
Description
MOSFET N-CH 30V 27A TO220
Manufacturer
STMicroelectronics
Series
STripFET™r
Specifications of STP27N3LH5
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 13.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
27A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
4.6nC @ 5V
Input Capacitance (ciss) @ Vds
475pF @ 25V
Power - Max
45W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
27A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.015ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2.5V
Configuration
Single
Resistance Drain-source Rds (on)
0.02 Ohms
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
27 A
Power Dissipation
30 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-9095-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP27N3LH5
Manufacturer:
RUICHIPS
Quantity:
20 000
STD27N3LH5, STP27N3LH5, STU27N3LH5
Figure 8.
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage
(norm)
(norm)
BV
V
GS(th)
1.00
0.95
0.90
1.05
0.85
V
1.10
(V)
0.7
0.6
0.5
1.1
1.0
0.9
0.8
0.4
DSS
12
10
GS
6
4
2
8
0
-55
-55
0
Normalized BV
vs temperature
-30
-30
V
DD
I
-5
D
-5
=15V
=27A
2
20 45
20 45
4
70
DSS
70
95 120 145
95
vs temperature
120
6
T
Q
J
Doc ID 15617 Rev 2
(°C)
g
(nC)
AM03902v1
T
AM03904v1
AM03906v1
J
(°C)
Figure 9.
Figure 13. Normalized on resistance vs
R
(norm)
R
DS(on)
DS(on)
310
210
110
(pF)
610
510
410
810
710
(Ω)
0.6
0.4
0.8
1.8
1.6
1.4
1.2
1.0
10
C
25
35
30
20
10
15
-55
5
0
0
0
Static drain-source on resistance
Crss
temperature
-30
5
-5
I
V
D
GS
10
=13.5A
20 45
10
=10V
T J =25°C
f=1MHz
Electrical characteristics
15
70
20
95
20
120
25
T
V
J
DS
(°C)
AM03907v1
AM03903v1
AM03905v1
(V)
I
Ciss
D
Coss
(A)
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