STL65N3LLH5 STMicroelectronics, STL65N3LLH5 Datasheet

MOSFET N-CH 30V 19A POWERFLAT6X5

STL65N3LLH5

Manufacturer Part Number
STL65N3LLH5
Description
MOSFET N-CH 30V 19A POWERFLAT6X5
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STL65N3LLH5

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.8 mOhm @ 9.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
65A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 4.5V
Input Capacitance (ciss) @ Vds
1500pF @ 25V
Power - Max
4W
Mounting Type
Surface Mount
Package / Case
PowerFlat™ (6 x 5)
Transistor Polarity
N Channel
Continuous Drain Current Id
9.5A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
4.8mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.0058 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 22 V
Continuous Drain Current
65 A
Power Dissipation
60 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8484-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STL65N3LLH5
Manufacturer:
ST
0
Features
1. The value is rated according R
Application
Description
This product utilizes the 5
rules of ST’s proprietary STripFET™ technology.
The lowest available R
package, makes this device suitable for the most
demanding DC-DC converter applications, where
high power density is to be achieved.
Table 1.
September 2008
STL65N3LLH5
R
Extremely low on-resistance R
Very low switching gate charge
High avalanche ruggedness
Low gate drive power losses
Switching applications
DS(on)
STL65N3LLH5
Type
Order code
* Q
Device summary
g
industry benchmark
V
30 V
DS(on)
N-channel 30 V, 0.0048 Ω , 19 A - PowerFLAT™ (6x5)
DSS
th
generation of design
thj-pcb
*Q
<0.0058 Ω
g
R
, in this chip scale
max
DS(on)
DS(on)
65N3LLH5
Marking
19 A
I
D
(1)
Rev 4
Figure 1.
PowerFLAT™ (6x5)
STripFET™ V Power MOSFET
Package
Internal schematic diagram
PowerFLAT™ ( 6x5 )
STL65N3LLH5
Tape and reel
Packaging
www.st.com
1/12
12

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STL65N3LLH5 Summary of contents

Page 1

... Table 1. Device summary Order code STL65N3LLH5 September 2008 STripFET™ V Power MOSFET R DS(on max <0.0058 Ω ( DS(on) Figure this chip scale g Marking 65N3LLH5 PowerFLAT™ (6x5) Rev 4 STL65N3LLH5 PowerFLAT™ ( 6x5 ) Internal schematic diagram Package Packaging Tape and reel 1/12 www.st.com 12 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ STL65N3LLH5 ...

Page 3

... STL65N3LLH5 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS (1) I Drain current (continuous (1) I Drain current (continuous (2) I Drain current (continuous (2) I Drain current (continuous (3) I Drain current (pulsed) DM (1) P Total dissipation at T TOT (2) P Total dissipation at T TOT ...

Page 4

... Max rating Max rating @125 ° ± 4 Parameter Test conditions V =25 V, f=1 MHz = =4 (see Figure 14) STL65N3LLH5 Min. Typ 250 µ 9.5 A 0.0048 0.0058 D = 9.5 A 0.006 0.0075 D Min. Typ. Max. 1500 295 4.7 Max. Unit V 1 µA 10 µA 100 nA ± V Ω Ω ...

Page 5

... STL65N3LLH5 Table 7. Switching times Symbol t d(on) Turn-on delay time t Rise time r t Turn-off delay time d(off) Fall time t f Table 8. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...

Page 6

... Output characteristics Figure 6. Normalized B VDSS BV DSS (norm) 1.1 1. 1.06 1.04 1.02 1 0.98 0.96 0.94 0.92 -55 - 6/12 Figure 3. HV42910 T =150° =25°C C Single pulse 10 ms 100 (V) SD Figure 5. vs temperature Figure 7. HV42950 T (°C) 95 120 145 J STL65N3LLH5 Thermal impedance Transfer characteristics Static drain-source on resistance ...

Page 7

... STL65N3LLH5 Figure 8. Gate charge vs gate-source voltage Figure Figure 10. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1.2 1 0.8 0.6 0.4 0.2 0 -55 - Figure 12. Source-drain diode forward characteristics V (V) SD 0.9 T =-55 °C J 0.8 0.7 0.6 0.5 0 HV42940 15 20 Qg(nC) Figure 11. Normalized on resistance vs ...

Page 8

... Test circuits Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped inductive waveform 8/12 Figure 14. Gate charge test circuit Figure 16. Unclamped inductive load test circuit Figure 18. Switching time waveform STL65N3LLH5 ...

Page 9

... STL65N3LLH5 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

Page 10

... Package mechanical data 10/12 Pow er FLA T™ ( 6x5) m echani cal dat Typ STL65N3LLH5 i nch Typ. M ax. 0. 031 036 0. 0007 0. 0019 0. 007 0. 013 0. 015 0. 018 0. 196 0. 187 0. 163 0. 165 0. 167 0. 236 0. 226 0. 135 0. 137 0. 139 0. 103 0. 105 0. 050 0. 027 0. 031 0. 035 ...

Page 11

... STL65N3LLH5 5 Revision history Table 9. Document revision history Date 04-Jan-2007 01-Apr-2008 07-May-2008 23-Sep-2008 Revision 1 First release 2 Document status promoted from preliminary data to datasheet. Figure 9: Capacitance variations 3 Updated 4 V value has been changed on GS Revision history Changes Table 2 Table 5 and 11/12 ...

Page 12

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STL65N3LLH5 ...

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