STP5NK52ZD STMicroelectronics, STP5NK52ZD Datasheet - Page 4

• Manufacturer Part Number: STP5NK52ZD
• Description: MOSFET N-CH 520V 4.4A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP5NK52ZD

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 520V
• Current - Continuous Drain (id) @ 25° C: 4.4A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 16.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 529pF @ 25V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 Ohms
• Drain-source Breakdown Voltage: 520 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5953-5

Electrical characteristics
2
4/17
Electrical characteristics
(Tcase =25°C unless otherwise specified)
Table 5.
Table 6.
1. C
C
V
Symbol
Symbol
OSS eq
V
R
(BR)DSS
increases from 0 to 80% V
C
I
I
C
C
Q
GS(th)
Q
DS(on
GSS
DSS
g
Q
oss eq
oss
iss
rss
fs
gs
gd
g
(1)
. is defined as a constant equivalent capacitance giving the same charging time as C
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
Parameter
Parameter
DS
= 0)
DSS
GS
= 0)
V
V
V
V
V
(see
I
V
V
V
V
D
DS
DS
GS
DD
GS
DS
DS
GS
DS
GS
= 1 mA, V
= Max rating
= Max rating, T
= 15 V, I
= 25 V, f = 1 MHz, V
= 0, V
= 10 V
= ± 20 V
= V
= 10 V, I
= 416 V, I
Figure
Test conditions
Test conditions
GS
DS
, I
19)
GS
D
D
D
= 0 to 416 V
D
= 50 µA
= 2.2 A
= 2.2 A
= 0
= 4.4 A,
C
=125 °C
STB5NK52ZD-1, STD/F/P5NK52ZD
GS
= 0
Min.
Min.
520
2.5
Typ.
Typ.
13.4
16.9
3.75
1.22
529
3.1
4.2
8.4
71
11
oss
when V
Max.
Max.
± 10
4.5
1.5
50
1
D
S
Unit
Unit
nC
nC
nC
µA
µA
µA
pF
pF
pF
pF
Ω
V
V
S