STP5NK80Z STMicroelectronics, STP5NK80Z Datasheet - Page 6

• Manufacturer Part Number: STP5NK80Z
• Description: MOSFET N-CH 800V 4.3A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP5NK80Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.4 Ohm @ 2.15A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 45.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 910pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.4 Ohms
• Forward Transconductance Gfs (max / Min): 4.25 S
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 4.3 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7527-5; STP5NK80Z

Electrical characteristics
6/15
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
I
V
SDM
I
RRM
I
SD
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
di/dt = 100A/µs,
V
(see
SD
SD
DD
= 4.3 A, V
= 4.3 A,
Test conditions
=40 V, Tj = 150°C
Figure
20)
GS
=0
STP5NK80Z - STP5NK80ZFP
Min
Typ.
500
12
3
Max
17.2
4.3
1.6
Unit
µC
ns
A
A
V
A