STB20NK50ZT4 STMicroelectronics, STB20NK50ZT4 Datasheet - Page 6

• Manufacturer Part Number: STB20NK50ZT4
• Description: MOSFET N-CH 500V 17A D2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STB20NK50ZT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 270 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 119nC @ 10V
• Input Capacitance (ciss) @ Vds: 2600pF @ 25V
• Power - Max: 190W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.27 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 13 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 17 A
• Power Dissipation: 190000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 8.5A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 230mohm
• Rds(on) Test Voltage Vgs: 30V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4323-2

Electrical characteristics
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Table 7.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Pulse width limited by safe operating area
Table 8.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
I
Symbol
V
SDM
BV
I
I
RRM
RRM
I
SD
Q
Q
SD
t
t
rr
rr
rr
rr
GSO
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown voltage Igs=± 1mA (open drain)
Source drain diode
Gate-source Zener diode
Parameter
Parameter
Doc ID 9118 Rev 9
I
I
di/dt = 100 A/µs
V
(see
I
di/dt = 100 A/µs
V
(see
SD
SD
SD
R
R
= 100 V
= 100 V, Tj = 150 °C
= 17 A, V
= 17 A,
= 17 A,
Test conditions
Figure
Figure
Test conditions
21)
21)
GS
= 0
Min.
Min.
-
-
-
-
30
Typ.
3.90
5.72
355
440
22
26
Typ.
STx20NK50Z
Max.
Max.
1.6
17
68
Unit
Unit
µC
µC
ns
ns
A
A
V
A
A
V