STB20NK50ZT4 STMicroelectronics, STB20NK50ZT4 Datasheet - Page 6
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STB20NK50ZT4
Manufacturer Part Number
STB20NK50ZT4
Description
MOSFET N-CH 500V 17A D2PAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STB20NK50ZT4.pdf
(18 pages)
Specifications of STB20NK50ZT4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
270 mOhm @ 8.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
119nC @ 10V
Input Capacitance (ciss) @ Vds
2600pF @ 25V
Power - Max
190W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.27 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
13 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
17 A
Power Dissipation
190000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
8.5A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
230mohm
Rds(on) Test Voltage Vgs
30V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4323-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Electrical characteristics
6/18
Table 7.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Pulse width limited by safe operating area
Table 8.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
I
Symbol
V
SDM
BV
I
I
RRM
RRM
I
SD
Q
Q
SD
t
t
rr
rr
rr
rr
GSO
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown voltage Igs=± 1mA (open drain)
Source drain diode
Gate-source Zener diode
Parameter
Parameter
Doc ID 9118 Rev 9
I
I
di/dt = 100 A/µs
V
(see
I
di/dt = 100 A/µs
V
(see
SD
SD
SD
R
R
= 100 V
= 100 V, Tj = 150 °C
= 17 A, V
= 17 A,
= 17 A,
Test conditions
Figure
Figure
Test conditions
21)
21)
GS
= 0
Min.
Min.
-
-
-
-
30
Typ.
3.90
5.72
355
440
22
26
Typ.
STx20NK50Z
Max.
Max.
1.6
17
68
Unit
Unit
µC
µC
ns
ns
A
A
V
A
A
V