STP80NF03L-04 STMicroelectronics, STP80NF03L-04 Datasheet - Page 5

• Manufacturer Part Number: STP80NF03L-04
• Description: MOSFET N-CH 30V 80A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP80NF03L-04

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5500pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.004 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 50 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2676-5

STB80NF03L-04T4
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulse duration=300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
d(on)
d(off)
SD
RRM
I
Q
t
SD
t
t
r
f
rr
rr
(1)
(2)
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 8479 Rev 4
V
R
Figure 16
I
I
di/dt = 100 A/µs
T
SD
SD
DD
G
j
=150 °C
=80 A, V
= 4.7 Ω, V
= 80 A, V
= 15 V, I
Test conditions
Test conditions
DD
D
GS
GS
= 40 A,
= 20 V
=4.5 V
= 0
Electrical characteristics
Min.
Min.
-
-
-
-
-
Typ.
Typ.
0.15
270
110
75
30
95
4
Max. Unit
Max. Unit
320
1.5
80
-
µC
ns
ns
ns
ns
ns
5/13
A
A
V
A