STV270N4F3 STMicroelectronics, STV270N4F3 Datasheet
STV270N4F3
Specifications of STV270N4F3
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STV270N4F3 Summary of contents
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... N-channel 40 V, 1.25 mΩ, 270 A, PowerSO-10 STripFET™ III Power MOSFET R (1) DS(on max < 1.5 mΩ 270 A Figure 1. Marking 270N4F3 Doc ID 14089 Rev 6 STV270N4F3 10 1 PowerSO-10 Internal schematic diagram and connection diagram (top view) Package Packaging PowerSO-10 Tape and reel 1/12 www.st.com 12 ...
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... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ Doc ID 14089 Rev 6 STV270N4F3 ...
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... STV270N4F3 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS (1) I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed) DM (2) P Total dissipation at T TOT Derating factor (3) E Single pulse avalanche energy AS T Storage temperature stg T Operating junction temperature j 1 ...
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... Figure 4.7 Ω Figure 13 Doc ID 14089 Rev 6 Min. Typ =125 ° 1.25 Min. Typ. - 200 7500 =0 - 1900 GS 50 110 - 30 25 Min. Typ 180 = 110 = STV270N4F3 Max. Unit V 10 µA 100 µA ±200 1.5 mΩ Max. Unit 150 Max. Unit ...
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... STV270N4F3 Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SD (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% ...
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... Tj=175°C Tc=25°C Single pulse 100µs 1ms 10ms (V) DS Figure 5. AM01502v1 I (A) D 450 400 5V 350 300 250 200 150 100 ( Figure 7. AM01501v1 (A) D Doc ID 14089 Rev 6 STV270N4F3 Thermal impedance Transfer characteristics V = =25° Normalized B vs temperature VDSS AM01503v1 V (V) GS ...
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... STV270N4F3 Figure 8. Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Figure 12. Source-drain diode forward characteristics V (V) SD 0.95 T =-50°C J 0.90 0.85 0.80 T =25°C J 0.75 0.70 0.65 0.60 0.55 0.50 0.45 0. 100 120 140 160 180 40 Figure 11. Normalized on resistance vs ...
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... AM01468v1 Figure 16. Unclamped inductive load test 3.3 1000 µF µ AM01470v1 Figure 18. Switching time waveform V (BR)DSS 10% 0 AM01472v1 Doc ID 14089 Rev 6 STV270N4F3 12V 47kΩ 100nF I =CONST G 100Ω GMAX 2200 µF 2.7kΩ 47kΩ 1kΩ circuit 2200 3.3 µ ...
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... STV270N4F3 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Doc ID 14089 Rev 6 Package mechanical data ® 9/12 ...
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... B 0. SEATING PLANE SEATING PLANE A1 L α 0068039-C STV270N4F3 MAX. 0.144 0.004 0.024 0.022 0.378 0.300 0.374 0.291 0.300 0.250 0.240 0.053 0.567 0.071 ...
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... STV270N4F3 5 Revision history Table 8. Document revision history Date 25-Oct-2007 03-Apr-2008 01-Oct-2008 09-Mar-2009 05-May-2009 17-Jun-2009 Revision 1 Initial release 2 I value has been updated Document status promoted from preliminary data to datasheet 4 R value has been changed in thj-pcb Changed: Description 5 characteristics 6 Corrected typing error on cover page ...
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... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 14089 Rev 6 STV270N4F3 ...