STV270N4F3 STMicroelectronics, STV270N4F3 Datasheet - Page 6

• Manufacturer Part Number: STV270N4F3
• Description: MOSFET N-CH 40V 270A POWERSO-10
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STV270N4F3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.5 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 270A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 7500pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 270A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 0.00125ohm
• Rds(on) Test Voltage Vgs: 10V
• Configuration: Single
• Resistance Drain-source Rds (on): 1.25 Ohms
• Forward Transconductance Gfs (max / Min): 200 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 270 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7031-2

Electrical characteristics
2.1
6/12
Figure 2.
Figure 4.
Figure 6.
R
DS(on)
(mΩ)
10
10
1.30
1.20
10
10
10
1.40
1.10
1.00
I
(A)
I
D
250
150
100
450
400
350
300
D
200
(A)
3
2
1
10
50
0
-1
0
0
0
-1
Electrical characteristics
Safe operating area
Output characteristics
Static drain-source on resistance
20
2
V
10
T
GS ≥
C
0
=25°C
V
GS
10V
40
=10V
4
10
60
1
Tj=175°C
Tc=25°C
Single pulse
6
V
80
5V
DS
4V
(V)
Doc ID 14089 Rev 6
V
I
AM01500v1
AM01502v1
AM01501v1
D
DS
(A)
100µs
1ms
10ms
(V)
Figure 3.
Figure 5.
Figure 7.
I
D
450
400
350
300
250
100
200
150
(A)
50
0
0
Thermal impedance
Transfer characteristics
Normalized B
2
4
VDSS
6
vs temperature
V
T
DS
C
=25°C
STV270N4F3
=5V
8
V
AM01503v1
GS
(V)