STV300NH02L STMicroelectronics, STV300NH02L Datasheet - Page 4

MOSFET N-CH 24V 280A POWERSO-10

STV300NH02L

Manufacturer Part Number
STV300NH02L
Description
MOSFET N-CH 24V 280A POWERSO-10
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STV300NH02L

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
24V
Current - Continuous Drain (id) @ 25° C
280A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
109nC @ 10V
Input Capacitance (ciss) @ Vds
7055pF @ 15V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
PowerSO-10 Exposed Bottom Pad
Transistor Polarity
N Channel
Continuous Drain Current Id
280A
Drain Source Voltage Vds
24V
On Resistance Rds(on)
0.0008ohm
Rds(on) Test Voltage Vgs
10V
Configuration
Single
Resistance Drain-source Rds (on)
0.001 Ohm @ 10 V
Drain-source Breakdown Voltage
24 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
280 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7614-2
STV300NH02L

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STV300NH02L
Quantity:
200
Electrical characteristics
2
4/12
Electrical characteristics
(Tcase =25°C unless otherwise specified)
Table 4.
Table 5.
V
Symbol
Symbol
R
V
(BR)DSS
C
I
I
C
DS(on)
C
Q
GS(th)
Q
GSS
R
DSS
Q
oss
iss
rss
gs
gd
G
g
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
V
V
V
(see Figure 15)
V
I
V
V
V
V
D
DS
DD
GS
DS
DS
DS
DS
DS
GS
= 1mA, V
= 10V
= V
= 12V, I
= 10V, I
= Max rating,
= Max rating, T
= ± 20V
= 15V, f = 1 MHz, V
= 0V, f = 1 MHz, V
Test conditions
Test conditions
GS
, I
D
D
GS
D
= 120A,
= 80A
= 250 A
= 0
c
=125°C
GS
GS
=0
=0
Min.
Min.
24
1
7055
3251
Typ.
Typ.
307
109
4.4
1.5
0.8
30
26
STV300NH02L
Max.
±100
Max.
10
1
2
1
Unit
Unit
m
nC
nC
nC
µA
µA
nA
pF
pF
pF
V
V

Related parts for STV300NH02L