STV160NF03LT4 STMicroelectronics, STV160NF03LT4 Datasheet - Page 8

• Manufacturer Part Number: STV160NF03LT4
• Description: MOSFET N-CH 30V 160A POWERSO-10
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STV160NF03LT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.8 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 140nC @ 10V
• Input Capacitance (ciss) @ Vds: 4700pF @ 25V
• Power - Max: 210W
• Mounting Type: Surface Mount
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0019 Ohms
• Forward Transconductance Gfs (max / Min): 210 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 160 A
• Power Dissipation: 210 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3252-2

STV160NF03L
8/9
DIM.
D1
A1
E1
E2
E3
E4
C
D
H
A
B
e
E
F
h
L
q
A1
H
A
E
F
h
13.80
MIN.
3.35
0.00
0.40
0.35
9.40
7.40
9.30
7.20
7.20
6.10
5.90
1.25
1.20
0
o
10
1
0.25
e
PowerSO-10 MECHANICAL DATA
=
=
M
D1
D
=
=
TYP.
1.27
0.50
1.70
mm
B
6
5
DETAIL "A"
E2
DETAIL "A"
MAX.
14.40
3.65
0.10
0.60
0.55
9.60
7.60
9.50
7.40
7.60
6.35
6.10
1.35
1.80
8
o
Q
E3
SEATING
PLANE
C
B
A
0.10 A
E1
SEATING
PLANE
L
A1
0.132
0.000
0.016
0.013
0.370
0.291
0.366
0.283
0.283
0.240
0.232
0.049
0.543
0.047
B
MIN.
E4
0.050
0.002
0.067
TYP.
inch
0068039-C
MAX.
0.567
0.144
0.004
0.024
0.022
0.378
0.300
0.374
0.291
0.300
0.250
0.240
0.053
0.071