IXTA200N085T IXYS, IXTA200N085T Datasheet

MOSFET N-CH 85V 200A TO-263

IXTA200N085T

Manufacturer Part Number
IXTA200N085T
Description
MOSFET N-CH 85V 200A TO-263
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet

Specifications of IXTA200N085T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
85V
Current - Continuous Drain (id) @ 25° C
200A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
152nC @ 10V
Input Capacitance (ciss) @ Vds
7600pF @ 25V
Power - Max
480W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.005 Ohms
Drain-source Breakdown Voltage
85 V
Continuous Drain Current
200 A
Power Dissipation
480 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
85
Id(cont), Tc=25°c, (a)
200
Rds(on), Max, Tj=25°c, (?)
0.0050
Ciss, Typ, (pf)
7600
Qg, Typ, (nc)
152
Trr, Typ, (ns)
90
Trr, Max, (ns)
-
Pd, (w)
480
Rthjc, Max, (k/w)
0.31
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTA200N085T
Manufacturer:
IXYS
Quantity:
402
Part Number:
IXTA200N085T7
Manufacturer:
IXYS
Quantity:
440
TrenchMV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
I
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS CORPORATION All rights reserved
D25
LRMS
DM
AR
GSS
DSS
L
J
JM
stg
SOLD
DSS
DGR
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25° C unless otherwise specified)
Test Conditions
T
T
Transient
T
Lead Current Limit, RMS
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-220
TO-263
Test Conditions
V
V
V
V
V
S
V
C
C
C
C
C
GS
J
J
J
DS
GS
DS
GS
GS
= 25° C to 175° C
= 25° C to 175° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
≤ I
≤ 175° C, R
= 25° C
= 0 V, I
= V
= ± 20 V, V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
TM
DSS
, I
D
D
= 250 µA
D
= 250 µA
G
= 25 A, Notes 1, 2
DS
= 5 Ω
= 0 V
GS
Preliminary Technical Information
= 1 MΩ
DD
T
J
≤ V
= 150° C
DSS
IXTA 200N085T
IXTP 200N085T
JM
Min.
2.0
85
Characteristic Values
-55 ... +175
-55 ... +175
Maximum Ratings
1.13 / 10 Nm/lb.in.
Typ.
4.2
± 20
200
540
480
175
300
260
1.0
2.5
85
85
75
25
3
± 200
3
250
Max.
4.0
5.0
5
V/ns
m Ω
µA
nA
°C
°C
°C
°C
°C
µA
W
V
A
A
A
V
V
V
A
g
g
V
J
Features
Advantages
Applications
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Easy to mount
Space savings
High power density
- Motor Drives
- 42V Power Bus
- ABS Systems
Primary Switch for 24V and 48V
TO-263 (IXTA)
V
I
R
DC/DC Converters and Off-line UPS
High Current Switching
D25
TO-220 (IXTP)
Systems
Applications
G = Gate
S = Source
Automotive
DSS
DS(on)
G
G
D
S
=
= 200
≤ ≤ ≤ ≤ ≤
S
D = Drain
TAB = Drain
5.0 m Ω Ω Ω Ω Ω
85
(TAB)
DS99643 (11/06)
(TAB)
A
V

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IXTA200N085T Summary of contents

Page 1

... I GS(th ± GSS DSS DS DSS Notes 1, 2 DS(on © 2006 IXYS CORPORATION All rights reserved Preliminary Technical Information IXTA 200N085T IXTP 200N085T Maximum Ratings MΩ ± 20 200 75 540 JM 25 1.0 ≤ DSS 480 -55 ... +175 175 -55 ... +175 300 260 1. Nm/lb.in. 3 2.5 Characteristic Values Min ...

Page 2

... Characteristic Values Min. Typ. Max Kelvin test contact DS(on) 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA200N085T IXTP200N085T TO-263AA (IXTA) Outline Pins Gate 2 - Drain Source 4, TAB - Drain nC Dim. Millimeter nC Min. Max. Min. A 4.06 4 ...

Page 3

... Value D 140 120 T = 175ºC J 100 25º -50 200 240 280 320 IXTA200N085T IXTP200N085T Fig. 2. Extended Output Characteristics @ 25º 10V Volts DS Fig Normalized 100A Value DS(on) D vs. Junction Temperature V = 10V 200A 100A ...

Page 4

... 25º 1.1 1.2 1.3 0 1.00 0.10 0.01 0.0001 IXTA200N085T IXTP200N085T Fig. 8. Transconductance 40ºC J 25ºC 150º 120 150 180 210 240 I - Amperes D Fig. 10. Gate Charge = 43V DS = 25A D = 10mA 100 120 Q - NanoCoulombs G Fig. 19. Maximum Transient Thermal Impedance 0.001 0.01 ...

Page 5

... T = 25ºC J 100 180 95 160 125º 140 80 120 75 100 =125º 25º IXTA200N085T IXTP200N085T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current T = 25º Ω 10V 43V 125º Amperes D Fig. 16. Resistive Turn-off I = 25A d(off Ω 10V G GS ...

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