IXTH160N10T IXYS, IXTH160N10T Datasheet
![MOSFET N-CH 100V 160A TO-247](/photos/5/50/55003/ixth160n10t_sml.jpg)
IXTH160N10T
Specifications of IXTH160N10T
Related parts for IXTH160N10T
IXTH160N10T Summary of contents
Page 1
... ± GSS DSS DS DSS Notes 1, 2 DS(on © 2006 IXYS CORPORATION All rights reserved Preliminary Technical Information IXTH160N10T IXTQ160N10T Maximum Ratings 100 = 1 MΩ 100 GS ± 30 160 75 430 JM 25 500 ≤ DSS 430 -55 ... +175 175 -55 ... +175 300 260 1. Nm/lb.in. 5.5 6 Characteristic Values Min ...
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... DSS D 40 0.25 Characteristic Values Min. Typ. JM 100 Kelvin test contact DS(on) The Technical Specifications 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTH160N10T IXTQ160N10T TO-247 AD Outline Max Terminals Gate 3 - Source nC Dim. Millimeter nC Min. Max. A 4.7 5.3 ...
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... T - Degrees Centigrade J Fig. 6. Drain Current vs. Case Temperature External Lead Current Limit for TO-263 (7-Lead) 80 External Lead Current Limit for TO-3P, TO-220, & TO-263 -50 - Degrees Centigrade C IXTH160N10T IXTQ160N10T 160A Value D = 160A 80A D 100 125 150 175 100 125 150 175 ...
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... T = 25º 1.1 1.2 1.3 1.4 1.00 C iss C oss 0.10 C rss 0.01 0.0001 IXTH160N10T IXTQ160N10T Fig. 8. Transconductance 40ºC J 25ºC 150º 100 120 140 I - Amperes D Fig. 10. Gate Charge V = 50V 25A 10mA NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance ...
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... T = 125º 10V 50V DS 130 I D 110 Ohms G Fig. 17. Resistiv e Turn-off Switching Times vs. Drain Current 125º 25º 125º Amperes D © 2006 IXYS CORPORATION All rights reserved = 5 Ω 10V 50V 105 115 125 50A 25A 140 - - - - d(off) 77 130 = 5 Ω ...