STB23NM60ND STMicroelectronics, STB23NM60ND Datasheet - Page 7
![MOSFET N-CH 600V 19.5A D2PAK](/photos/1/39/13904/d2pak_sml.jpg)
STB23NM60ND
Manufacturer Part Number
STB23NM60ND
Description
MOSFET N-CH 600V 19.5A D2PAK
Manufacturer
STMicroelectronics
Series
FDmesh™r
Datasheet
1.STB23NM60ND.pdf
(18 pages)
Specifications of STB23NM60ND
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
180 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
19.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
2050pF @ 50V
Power - Max
150W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.18 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
19.5 A
Power Dissipation
150000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
10A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
150mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8472-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
STB/I/F/P/W23NM60ND
Figure 8.
Figure 10. Transconductance
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
V
(V)
10
12
GS
2
8
6
4
0
0
Output characteristics
V
V
I
DD
D
GS
=19.5A
=480V
=10V
20
40
60
80
Q
Doc ID 14367 Rev 3
g
(nC)
AM01537v1
Figure 9.
Figure 11. Static drain-source on resistance
10000
1000
100
(pF)
10
C
1
0.1
Transfer characteristics
1
Electrical characteristics
10
100
V
DS
AM01538v1
(V)
Ciss
Crss
Coss
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