STB23NM60ND STMicroelectronics, STB23NM60ND Datasheet - Page 7

• Manufacturer Part Number: STB23NM60ND
• Description: MOSFET N-CH 600V 19.5A D2PAK
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STB23NM60ND

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 180 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 19.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 2050pF @ 50V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.18 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 19.5 A
• Power Dissipation: 150000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 10A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 150mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8472-2

STB/I/F/P/W23NM60ND
Figure 8.
Figure 10. Transconductance
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
V
(V)
10
12
GS
2
8
6
4
0
0
Output characteristics
V
V
I
DD
D
GS
=19.5A
=480V
=10V
20
40
60
80
Q
Doc ID 14367 Rev 3
g
(nC)
AM01537v1
Figure 9.
Figure 11. Static drain-source on resistance
10000
1000
100
(pF)
10
C
1
0.1
Transfer characteristics
1
Electrical characteristics
10
100
V
DS
AM01538v1
(V)
Ciss
Crss
Coss
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