STB25NM60ND STMicroelectronics, STB25NM60ND Datasheet - Page 17
![MOSFET N-CH 600V 21A D2PAK](/photos/1/39/13904/d2pak_sml.jpg)
STB25NM60ND
Manufacturer Part Number
STB25NM60ND
Description
MOSFET N-CH 600V 21A D2PAK
Manufacturer
STMicroelectronics
Series
FDmesh™r
Datasheet
1.STB25NM60ND.pdf
(18 pages)
Specifications of STB25NM60ND
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
160 mOhm @ 10.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
21A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
80nC @ 10V
Input Capacitance (ciss) @ Vds
2400pF @ 50V
Power - Max
160W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.16 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
21 A
Power Dissipation
160 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Fall Time
40 ns
Rise Time
30 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8473-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
STx25NM60ND
6
Revision history
Table 8.
15-Nov-2007
03-Mar-2009
22-Jan-2008
08-Apr-2008
Date
Document revision history
Revision
1
2
3
4
First release.
Document status promoted from target specification to
preliminary data.
– Updated
– Document status promoted from preliminary data to
Q
g
datasheet.
value has been updated.
Table 3: Thermal data on page
Changes
3;
Revision history
17/18