IXTH180N10T IXYS, IXTH180N10T Datasheet - Page 3

• Manufacturer Part Number: IXTH180N10T
• Description: MOSFET N-CH 100V 180A TO-247
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTH180N10T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 151nC @ 10V
• Input Capacitance (ciss) @ Vds: 6900pF @ 25V
• Power - Max: 480W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0064 Ohms
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 180 A
• Power Dissipation: 480 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 180
• Rds(on), Max, Tj=25°c, (?): 0.0064
• Ciss, Typ, (pf): 6900
• Qg, Typ, (nc): 151
• Trr, Typ, (ns): 100
• Trr, Max, (ns): -
• Pd, (w): 480
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2006 IXYS CORPORATION All rights reserved
180
160
140
120
100
180
160
140
120
100
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
80
60
40
20
80
60
40
20
0
3
2
1
0
0
0
0
Fig. 5. R
V
GS
0.4
0.2
50
= 10V
15V - - - -
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
DS(on)
0.8
vs. Drain Current
100
0.4
Normalized to I
I
D
V
V
- Amperes
DS
1.2
DS
@ 150ºC
@ 25ºC
- Volts
- Volts
V
150
V
0.6
GS
GS
= 10V
= 10V
1.6
9V
8V
9V
8V
7V
6V
7V
6V
5V
200
D
0.8
= 90A Value
2
T
J
= 175ºC
T
250
J
1
2.4
= 25ºC
300
2.8
1.2
140
120
100
300
275
250
225
200
175
150
125
100
80
60
40
20
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
75
50
25
0
2
1
0
-50
-50
0
V
External Lead Current Limit for TO-3P, TO-220, & TO-263
External Lead Current Limit for TO-263 (7-Lead)
Fig. 6. Drain Current vs. Case Temperature
GS
Fig. 4. R
Fig. 2. Extended Output Characteristics
V
-25
-25
= 10V
GS
9V
8V
1
= 10V
6V
7V
0
0
DS(on)
vs. Junction Temperature
T
T
C
J
2
- Degrees Centigrade
- Degrees Centigrade
25
25
Normalized to I
V
DS
@ 25ºC
50
3
50
- Volts
I
D
= 180A
75
75
4
IXTQ180N10T
IXTH180N10T
100
100
D
I
= 90A Value
D
5
= 90A
125
125
6
150
150
175
175
7