IXTQ460P2 IXYS, IXTQ460P2 Datasheet - Page 2

• Manufacturer Part Number: IXTQ460P2
• Description: MOSFET N-CH 500V 24A TO3P
• Manufacturer: IXYS
• Series: PolarP2™r
• Type: PolarP2 Power MOSFETr

Specifications of IXTQ460P2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 270 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 48nC @ 10V
• Input Capacitance (ciss) @ Vds: 2890pF @ 25V
• Power - Max: 480W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Product: MOSFET Gate Drivers
• Rise Time: 9 ns
• Fall Time: 5 ns
• Supply Current: 12 A
• Maximum Power Dissipation: 480 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Maximum Turn-off Delay Time: 30 ns
• Maximum Turn-on Delay Time: 15 ns
• Minimum Operating Temperature: - 55 C
• Number Of Drivers: Single
• Number Of Outputs: 1
• Output Current: 24 A
• Output Voltage: 500 V
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 24
• Rds(on), Max, Tj=25°c, (?): 0.27
• Ciss, Typ, (pf): 2890
• Qg, Typ, (nc): 48
• Trr, Typ, (ns): 400
• Pd, (w): 480
• Rthjc, Max, (k/w): 0.26
• Package Style: TO-3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
I
Q
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
thCS
g(on)
gs
gd
RM
J
J
= 25°C Unless Otherwise Specified)
= 25°C Unless Otherwise Specified)
Resistive Switching Times
V
R
I
V
Test Conditions
V
V
V
TO-220
TO-3P & TO-247
Test Conditions
V
Repetitive, Pulse Width Limited by T
I
F
F
GS
R
DS
GS
G
GS
GS
= 12A, -di/dt = 100A/μs
= I
= 100V, V
= 10V, V
= 10Ω (External)
= 0V
= 20V, I
= 0V, V
= 10V, V
S
, V
GS
= 0V, Note 1
DS
D
DS
GS
DS
= 0.5 • I
= 25V, f = 1MHz
= 0.5 • V
= 0V
4,835,592
4,881,106
= 0.5 • V
D25
DSS
, Note 1
4,931,844
5,017,508
5,034,796
DSS
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
Min.
Min.
Characteristic Values
Characteristic Values
14
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
2890
Typ.
19.6
0.50
0.25
280
400
3.9
24
30
22
15
48
13
16
9
5
0.26 °C/W
Max.
Max.
6,404,065 B1
6,534,343
6,583,505
1.3
24
96
°C/W
°C/W
nC
nC
nC
μC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
IXTQ460P2 IXTH460P2
IXTA460P2 IXTP460P2
6,727,585
6,771,478 B2 7,071,537
7,005,734 B2
7,063,975 B2
7,157,338B2