IXTA96P085T IXYS, IXTA96P085T Datasheet - Page 3

• Manufacturer Part Number: IXTA96P085T
• Description: MOSFET P-CH 85V 96A TO-263
• Manufacturer: IXYS
• Series: TrenchP™r

Specifications of IXTA96P085T

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 85V
• Current - Continuous Drain (id) @ 25° C: 96A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 13100pF @ 25V
• Power - Max: 298W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Vdss, Max, (v): -85
• Id(cont), Tc=25°c, (a): -96
• Rds(on), Max, Tj=25°c, (?): 0.013
• Ciss, Typ, (pf): 13100
• Qg, Typ, (nc): 180
• Trr, Typ, (ns): 55
• Trr, Max, (ns): -
• Pd, (w): 298
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2010 IXYS CORPORATION, All Rights Reserved
-100
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
1.8
1.6
1.4
1.2
1.0
0.8
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
0
0
0
0
V
-0.2
GS
= -10V
-0.2
-50
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
Fig. 5. R
-0.4
-100
-0.4
-0.6
DS(on)
-0.8
Drain Current
Normalized to I
-150
-0.6
V
I
D
V
GS
V
V
GS
DS
- Amperes
DS
= -10V
= -10V
- Volts
- 9V
- 8V
- 7V
-1
- Volts
- 9V
- 8V
- 7V
-200
-0.8
-1.2
D
-1.4
= - 48A vs.
-250
T
-1
J
J
J
- 6V
- 5V
= 125ºC
- 5V
= 125ºC
= 25ºC
- 6V
-1.6
T
J
= 25ºC
-1.2
-300
-1.8
-1.4
-350
-2
-350
-300
-250
-200
-150
-100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-50
-110
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
-50
0
0
-50
V
V
Fig. 2. Extended Output Characteristics @ T
GS
GS
-2
= -10V
-25
= -10V
-25
- 9V
Fig. 4. R
Fig. 6. Maximum Drain Current vs.
-4
IXTA96P085T IXTP96P085T
0
0
DS(on)
T
Junction Temperature
J
- 8V
-6
- Degrees Centigrade
Case Temperature
T
25
J
25
Normalized to I
- Degrees Centigrade
V
-8
DS
50
- Volts
50
- 7V
-10
I
D
75
= - 96A
75
IXTH96P085T
-12
D
= - 48A vs.
100
100
-14
- 6V
I
D
= - 48A
J
= 25ºC
125
125
-16
- 5V
-18
150
150