IXTA76P10T IXYS, IXTA76P10T Datasheet - Page 4

• Manufacturer Part Number: IXTA76P10T
• Description: MOSFET P-CH 100V 76A TO-263
• Manufacturer: IXYS
• Series: TrenchP™r

Specifications of IXTA76P10T

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 76A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 197nC @ 10V
• Input Capacitance (ciss) @ Vds: 13700pF @ 25V
• Power - Max: 298W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Vdss, Max, (v): -100
• Id(cont), Tc=25°c, (a): -76
• Rds(on), Max, Tj=25°c, (?): 0.025
• Ciss, Typ, (pf): 13700
• Qg, Typ, (nc): 197
• Trr, Typ, (ns): 70
• Trr, Max, (ns): -
• Pd, (w): 298
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
-140
-120
-100
-240
-200
-160
-120
100
-80
-40
-80
-60
-40
-20
0
0
-0.4
-3.0
0
f
-0.5
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-3.5
-5
-0.6
-4.0
-10
-0.7
T
J
Fig. 7. Input Admittance
= 125ºC
Fig. 11. Capacitance
-0.8
-4.5
-15
V
DS
V
V
-0.9
GS
SD
T
C oss
- Volts
C iss
C rss
J
-5.0
-20
= 125ºC
- Volts
- Volts
- 40ºC
25ºC
-1.0
T
-5.5
J
-25
-1.1
= 25ºC
-1.2
-6.0
-30
-1.3
-6.5
-35
-1.4
-7.0
-1.5
-40
-
1,000
-
100
100
-
-10
80
60
40
20
10
-9
-8
-7
-6
-5
-4
-3
-2
-1
-
0
0
1
-
0
0
1
R
DS(on)
V
I
I
T
T
Single Pulse
D
G
DS
J
C
20
= - 38A
= -1mA
= 150ºC
= 25ºC
-20
= - 50V
Limit
Fig. 12. Forward-Bias Safe Operating Area
40
-40
IXTA76P10T IXTP76P10T
100ms
Fig. 8. Transconductance
60
Fig. 10. Gate Charge
-60
10ms
Q
80
V
G
I
DS
D
- NanoCoulombs
- Amperes
- Volts
DC
-
-80
100
1ms
10
120
-100
IXTH76P10T
T
J
= - 40ºC
140
100µs
-120
25ºC
125ºC
160
-140
25µs
180
-160
-
200
100