IXTA76P10T IXYS, IXTA76P10T Datasheet - Page 4
![MOSFET P-CH 100V 76A TO-263](/photos/5/50/55025/ixta76p10t_sml.jpg)
IXTA76P10T
Manufacturer Part Number
IXTA76P10T
Description
MOSFET P-CH 100V 76A TO-263
Manufacturer
IXYS
Series
TrenchP™r
Datasheet
1.IXTP76P10T.pdf
(6 pages)
Specifications of IXTA76P10T
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
25 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
76A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
197nC @ 10V
Input Capacitance (ciss) @ Vds
13700pF @ 25V
Power - Max
298W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Vdss, Max, (v)
-100
Id(cont), Tc=25°c, (a)
-76
Rds(on), Max, Tj=25°c, (?)
0.025
Ciss, Typ, (pf)
13700
Qg, Typ, (nc)
197
Trr, Typ, (ns)
70
Trr, Max, (ns)
-
Pd, (w)
298
Rthjc, Max, (k/w)
0.42
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
-140
-120
-100
-240
-200
-160
-120
100
-80
-40
-80
-60
-40
-20
0
0
-0.4
-3.0
0
f
-0.5
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-3.5
-5
-0.6
-4.0
-10
-0.7
T
J
Fig. 7. Input Admittance
= 125ºC
Fig. 11. Capacitance
-0.8
-4.5
-15
V
DS
V
V
-0.9
GS
SD
T
C oss
- Volts
C iss
C rss
J
-5.0
-20
= 125ºC
- Volts
- Volts
- 40ºC
25ºC
-1.0
T
-5.5
J
-25
-1.1
= 25ºC
-1.2
-6.0
-30
-1.3
-6.5
-35
-1.4
-7.0
-1.5
-40
-
1,000
-
100
100
-
-10
80
60
40
20
10
-9
-8
-7
-6
-5
-4
-3
-2
-1
-
0
0
1
-
0
0
1
R
DS(on)
V
I
I
T
T
Single Pulse
D
G
DS
J
C
20
= - 38A
= -1mA
= 150ºC
= 25ºC
-20
= - 50V
Limit
Fig. 12. Forward-Bias Safe Operating Area
40
-40
IXTA76P10T IXTP76P10T
100ms
Fig. 8. Transconductance
60
Fig. 10. Gate Charge
-60
10ms
Q
80
V
G
I
DS
D
- NanoCoulombs
- Amperes
- Volts
DC
-
-80
100
1ms
10
120
-100
IXTH76P10T
T
J
= - 40ºC
140
100µs
-120
25ºC
125ºC
160
-140
25µs
180
-160
-
200
100