IXTP10P50P IXYS, IXTP10P50P Datasheet

MOSFET P-CH 500V 10A TO-220

IXTP10P50P

Manufacturer Part Number
IXTP10P50P
Description
MOSFET P-CH 500V 10A TO-220
Manufacturer
IXYS
Series
PolarP™r
Datasheet

Specifications of IXTP10P50P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
2840pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220
Vdss, Max, (v)
-500
Id(cont), Tc=25°c, (a)
-10
Rds(on), Max, Tj=25°c, (?)
1
Ciss, Typ, (pf)
2670
Qg, Typ, (nc)
50
Trr, Typ, (ns)
414
Pd, (w)
300
Rthjc, Max, (k/w)
0.5
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PolarP
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
E
dV/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All Rights Reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AR
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
TO-263 (IXTA)
TM
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-3P,TO-220 & TO-247)
TO-247
TO-3P
TO-220
TO-263
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
C
GS
DS
GS
DS
GS
G
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±20V, V
= V
= -10V, I
DM
S
GS
, V
DSS
, I
DD
D
, V
D
= - 250μA
D
≤ V
= - 250μA
GS
DS
= 0.5 • I
D(TAB)
= 0V
DSS
= 0V
, T
J
D25
GS
≤ 150°C
, Note 1
= 1MΩ
T
J
= 125°C
IXTA10P50P
IXTH10P50P
IXTP10P50P
IXTQ10P50P
TO-220 (IXTP)
JM
G
D
S
- 500
- 2.0
Min.
-55 ... +150
-55 ... +150
Characteristic Values
Maximum Ratings
1.13/10
- 500
- 500
- 10
- 30
- 10
±20
±30
300
150
300
260
1.5
6.0
5.5
3.0
2.5
D(TAB)
Typ.
50
10
- 250 μA
±100 nA
- 4.0
Nm/lb.in.
Max.
- 10 μA
1
V/ns
mJ
°C
°C
°C
°C
°C
W
V
Ω
V
V
V
V
A
A
A
V
g
g
g
g
J
V
I
R
TO-247 (IXTH)
TO-3P (IXTQ)
G = Gate
S = Source
Features
Advantages
Applications
D25
International Standard Packages
Fast Intrinsic Diode
Dynamic dV/dt Rated
Avalanche Rated
Rugged PolarP
Low Q
Low Drain-to-Tab Capacitance
Low Package Inductance
Easy to Mount
Space Savings
High Power Density
High-Side Switches
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
DS(on)
DSS
G
G
D
G
D
and R
S
≤ ≤ ≤ ≤ ≤
=
=
S
ds(on)
TM
D
TAB = Drain
- 500V
- 10A
Process
Characterization
1Ω Ω Ω Ω Ω
= Drain
DS99911B(03/09)
D(TAB)
D(TAB)

Related parts for IXTP10P50P

IXTP10P50P Summary of contents

Page 1

... GS(th ±20V GSS DSS DS DSS -10V 0.5 • I DS(on © 2009 IXYS CORPORATION, All Rights Reserved IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P TO-220 (IXTP) D(TAB Maximum Ratings - 500 = 1MΩ - 500 GS ±20 ± 1.5 ≤ 150° 300 -55 ... +150 150 -55 ... +150 300 260 1.13/10 6 ...

Page 2

... I = 0.5 • DSS D D25 18 0.21 0.50 Characteristic Values Min. Typ. JM 414 5.90 - 28.6 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P Max 0.42 °C/W °C/W °C/W Max μC A 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 ...

Page 3

... TO-263 (IXTA) Outline TO-220 (IXTP) Outline Pins Gate © 2009 IXYS CORPORATION, All Rights Reserved TO-247 (IXTH) Outline TO-3P (IXTQ) Outline 2 - Drain IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P ∅ Terminals Gate 2 - Drain Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2 ...

Page 4

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions -10V - -10V -10 -12 -14 - 125º 25ºC J -14 -16 -18 -20 -22 -24 -26 IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P Fig. 2. Extended Output Characteristics @ 25ºC - -24 -22 -20 -18 -16 -14 -12 - -12 - Volts DS Fig Normalized to I DS(on) Junction Temperature 2 -10V 2.2 GS 2.0 1.8 I ...

Page 5

... T = 25º -2.5 -3 -3.5 - 100.0 C iss 10 oss - 1.0 C rss - 0.1 -25 -30 -35 - IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P Fig. 8. Transconductance 40º -10 - Amperes D Fig. 10. Gate Charge 250V -1mA NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area R Limit DS(on 150º 25ºC C Single Pulse - 100 ...

Page 6

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Fig. 13. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P 0 IXYS REF: T_10P50P(B5)5-21-08-B ...

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