IXTA52P10P IXYS, IXTA52P10P Datasheet - Page 5

• Manufacturer Part Number: IXTA52P10P
• Description: MOSFET P-CH 100V 52A TO-263
• Manufacturer: IXYS
• Series: PolarP™r

Specifications of IXTA52P10P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 52A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 2845pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.05 Ohms
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 52 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): -100.00
• Id(cont), Tc=25°c, (a): -52.00
• Rds(on), Max, Tj=25°c, (?): 0.050
• Ciss, Typ, (pf): 2845
• Qg, Typ, (nc): 60
• Trr, Typ, (ns): 120
• Pd, (w): 300
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2008 IXYS CORPORATION, All rights reserved
10,000
1,000
-160
-140
-120
-100
-70
-60
-50
-40
-30
-20
-10
-80
-60
-40
-20
100
0
0
-0.5
-3.0
0
f
-3.5
-1.0
= 1 MHz
-5
-4.0
Fig. 9. Forward Voltage Drop of
-1.5
-10
Fig. 7. Input Admittance
-4.5
Fig. 11. Capacitance
-2.0
-15
Intrinsic Diode
T
-5.0
J
V
= 125ºC
V
V
-2.5
GS
SD
DS
-5.5
- Volts
-20
- Volts
- Volts
-3.0
-6.0
T
-25
J
= - 40ºC
-3.5
125ºC
-6.5
25ºC
T
J
-30
= 25ºC
-4.0
C oss
-7.0
C rss
C iss
-35
-4.5
-7.5
-5.0
-8.0
-40
-
1,000
-
100
-
-10
32
28
24
20
16
12
10
-
-9
-8
-7
-6
-5
-4
-3
-2
-1
8
4
0
1
0
-
10
0
0
10ms
R
DS(on)
Fig. 12. Forward-Bias Safe Operating Area
T
T
Single Pulse
5
DC, 100ms
V
I
I
J
C
D
G
DS
= 150ºC
-10
= 25ºC
= - 26A
= -1mA
Limit @ V
10
= - 50V
1ms
Fig. 8. Transconductance
15
IXTA52P10P IXTH52P10P
IXTP52P10P IXTQ52P10P
-20
GS
Fig. 10. Gate Charge
20
= -15V
Q
I
D
G
- Amperes
25
V
-30
- NanoCoulombs
DS
- Volts
30
100µs
-40
35
40
125ºC
-50
45
T
J
25ºC
25µs
= - 40ºC
50
-60
55
-
-70
100
60