STP14NM65N STMicroelectronics, STP14NM65N Datasheet - Page 7

• Manufacturer Part Number: STP14NM65N
• Description: MOSFET N-CH 650V 12A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP14NM65N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 50V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 12 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7024-5

STB/F/I/P/W14NM65N
Figure 6.
Figure 8.
Figure 10. Transconductance
Safe operating area for TO-247
Output characteristics
Figure 7.
Figure 9.
Figure 11. Static drain-source on resistance
Thermal impedance for TO-247
Transfer characteristics
Electrical characteristics
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