IXTH6N50D2 IXYS, IXTH6N50D2 Datasheet - Page 4

• Manufacturer Part Number: IXTH6N50D2
• Description: MOSFET N-CH 500V 6A TO247
• Manufacturer: IXYS

Specifications of IXTH6N50D2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 500 mOhm @ 3A, 0V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 6A
• Gate Charge (qg) @ Vgs: 96nC @ 5V
• Input Capacitance (ciss) @ Vds: 2800pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vds, Max, (v): 500
• Id(on), Min, (a): 6
• Rds(on), Max, (?): 0.5
• Vgs(off), Max, (v): -4
• Ciss, Typ, (pf): 2800
• Crss, Typ, (pf): 64
• Qg, Typ, (nc): 96
• Pd, (w): 300
• Rthjc, Max, (ºc/w): 0.41
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
2.6
2.2
1.8
1.4
1.0
0.6
0.2
1.3
1.2
1.1
1.0
0.9
0.8
20
18
16
14
12
10
8
6
4
2
0
-3.5
-50
-50
V
Fig. 7. Normalized R
I
V
GS
D
-3.0
DS
= 3A
= 0V
-25
-25
= 30V
Fig. 11. Breakdown and Threshold Voltages
-2.5
0
0
-2.0
vs. Junction Temperature
T
T
Fig. 9. Input Admittance
J
J
- Degrees Centigrade
- Degrees Centigrade
25
25
-1.5
V
T
DS(on)
GS
J
= 125ºC
- Volts
- 40ºC
-1.0
25ºC
50
50
vs. Junction Temperature
-0.5
V
75
75
GS(off)
0.0
@ V
BV
100
100
DSX
DS
0.5
= 25V
@ V
GS
125
125
= - 5V
1.0
150
150
1.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
12
10
18
16
14
12
10
8
6
4
2
0
8
6
4
2
0
0.3
0
0
V
T
DS
J
V
= - 40ºC
GS
= 30V
2
2
125ºC
= -10V
25ºC
Fig. 8. R
0.4
4
4
Fig. 12. Forward Voltage Drop of
IXTA6N50D2 IXTP6N50D2
Fig. 10. Transconductance
DS(on)
6
6
0.5
vs. Drain Current
Intrinsic Diode
I
I
Normalized to I
D
D
8
8
V
T
- Amperes
- Amperes
J
SD
T
= 125ºC
J
- Volts
= 25ºC
0.6
10
10
T
J
= 125ºC
12
12
0.7
IXTH6N50D2
D
= 3A Value
14
14
V
GS
= 0V
16
16
5V
0.8
T
- - - -
J
= 25ºC
18
18
0.9
20
20