STB300NH02L STMicroelectronics, STB300NH02L Datasheet - Page 4

• Manufacturer Part Number: STB300NH02L
• Description: MOSFET N-CH 24V 120A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB300NH02L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.8 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 24V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 109.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 7055pF @ 15V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 80A
• Drain Source Voltage Vds: 24V
• On Resistance Rds(on): 1.4mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0018 Ohms
• Drain-source Breakdown Voltage: 24 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7945-2; STB300NH02L

Electrical characteristics
2
4/14
Electrical characteristics
(T
Table 5.
Table 6.
V
Symbol
Symbol
R
R
CASE
V
(BR)DSS
C
I
I
DS(on)
DS(on)
C
C
GS(th)
Q
Q
R
DSS
GSS
Q
oss
rss
iss
gs
gd
G
g
=25°C unless otherwise specified)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
GS
DS
= 0)
= 0)
V
V
V
(see Figure 14)
f=1 MHz Gate DC Bias = 0
Test signal level = 20mV
open drain
I
V
V
V
V
V
V
@100°C
D
DS
DD
GS
GS
GS
DS
DS
DS
DS
= 1mA, V
Test conditions
= 12V,I
= 10V
= V
= 10V, I
= 10V, I
= 20V,
= 20V, T
= ±20V
= 15V, f = 1 MHz, V
GS
Test conditions
, I
D
D
D
GS
D
= 120A,
c
= 80A
= 80A
= 250µA
=125°C
= 0
GS
TO-220
D²PAK
TO-220
D²PAK
STB300NH02L - STP300NH02L
=0
Min.
Min.
24
1
109.4
7055
3251
Typ.
Typ.
30.2
26.4
307
1.8
1.4
2.7
2.1
4.4
Max.
±100
Max. Unit
2.2
1.8
10
1
2
Unit
mΩ
mΩ
mΩ
mΩ
µA
µA
nA
nC
nC
nC
pF
pF
pF
V
V
Ω