STP15NM60ND STMicroelectronics, STP15NM60ND Datasheet - Page 5

MOSFET N-CH 600V 14A TO-220

STP15NM60ND

Manufacturer Part Number
STP15NM60ND
Description
MOSFET N-CH 600V 14A TO-220
Manufacturer
STMicroelectronics
Series
FDmesh™r
Datasheet

Specifications of STP15NM60ND

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
299 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
40nC @ 10V
Input Capacitance (ciss) @ Vds
1250pF @ 50V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.299 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
14 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8443-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP15NM60ND
Manufacturer:
ST
0
Company:
Part Number:
STP15NM60ND
Quantity:
28 800
STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND
2
Electrical characteristics
(T
Table 5.
1. Value measured at turn off under inductive load
Table 6.
1.
2. C
C
V
Symbol
Symbol
R
dv/dt
CASE
V
oss eq.
(BR)DSS
g
C
I
I
increases from 0 to 80% V
DS(on)
C
C
GS(th)
Q
Q
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DSS
GSS
Rg
Q
fs
oss
oss eq.
rss
iss
gs
gd
(1)
g
(1)
=25°C unless otherwise specified)
(2)
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Drain-source voltage slope
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
DSS
V
V
V
V
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain
V
V
(see Figure 19)
I
V
V
V
V
V
V
V
D
GS
GS
GS
DS
DS
DD
DD
GS
DS
DS
GS
DS
GS
= 1 mA, V
= V
= 10 V, I
=15 V, I
= 50 V, f =1 MHz,
= 0
= 0, V
= 480 V, I
= 10 V
= Max rating,
= ±20 V
= 480 V,I
= 10 V
= Max rating,@125 °C
Test conditions
Test conditions
GS
, I
DS
D
D
GS
D
= 0V to 480 V
D
= 7 A
= 250 µA
D
= 7 A
= 0
= 14 A,
= 14 A
Min.
Min.
Electrical characteristics
600
3
1250
Typ.
0.27
Typ.
180
30
10
65
40
22
4
5
4
8
oss
0.299
Max.
Max.
100
100
when V
1
5
DS
V/ns
Unit
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
pF
V
V
S
5/19

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