STP23NM60ND STMicroelectronics, STP23NM60ND Datasheet - Page 12

• Manufacturer Part Number: STP23NM60ND
• Description: MOSFET N-CH 600V 19.5A TO-220
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STP23NM60ND

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 180 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 19.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 2050pF @ 50V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.18 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 19.5 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8445-5

Package mechanical data
12/18
Dim
L20
L30
∅P
D1
H1
b1
e1
J1
L1
Q
A
D
E
b
c
e
F
L
TO-220 type A mechanical data
Doc ID 14367 Rev 3
15.25
4.40
0.61
1.14
0.48
2.40
4.95
1.23
6.20
2.40
3.50
3.75
2.65
Min
10
13
16.40
28.90
1.27
mm
Typ
STB/I/F/P/W23NM60ND
0015988_Rev_S
15.75
10.40
Max
4.60
0.88
1.70
0.70
2.70
5.15
1.32
6.60
2.72
3.93
3.85
2.95
14