STW75NF30 STMicroelectronics, STW75NF30 Datasheet - Page 6

• Manufacturer Part Number: STW75NF30
• Description: MOSFET N-CH 300V 60A TO-247
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STW75NF30

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 164nC @ 10V
• Input Capacitance (ciss) @ Vds: 5930pF @ 25V
• Power - Max: 320W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.045 Ohm @ 10 V
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 320 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 30A
• Drain Source Voltage Vds: 300V
• On Resistance Rds(on): 37mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8463-5

Electrical characteristics
2.1
6/12
Figure 2.
Figure 4.
Figure 6.
(norm)
BV
10
10
10
10
(A)
I
I
D
180
140
100
1.05
0.95
0.85
D
160
120
1.15
(A)
DSS
1.0
0.9
-1
0.8
2
1
10
40
20
0
80
60
-75 -50 -25
0
-1
Electrical characteristics (curves)
Safe operating area
Output characteristics
Normalized BV
10
0
V
GS
0
=10V
10
25 50 75 100 125 150 T
10
1
DSS
vs temperature
20
10
6V
2
5V
V
V
100µs
DS
10ms
10µs
1ms
DS
4V
(V)
(V)
AM00116v1
AM00117v1
AM00124v1
J
(°C)
Figure 3.
Figure 5.
Figure 7.
R
0.0345
0.0335
0.035
0.034
I
DS(on)
D
180
100
140
120
160
(A)
(Ω)
40
20
80
60
0
5
Thermal impedance
Transfer characteristics
Static drain-source on resistance
10
2
15
20
4
25
6
30
STW75NF30
V
GS
I
D
(A)
(V)
AM00118v1
AM00122v1