IXTP15N50L2 IXYS, IXTP15N50L2 Datasheet - Page 4
![MOSFET N-CH 15A 500V TO-220](/photos/5/50/55067/ixtp15n50l2_sml.jpg)
IXTP15N50L2
Manufacturer Part Number
IXTP15N50L2
Description
MOSFET N-CH 15A 500V TO-220
Manufacturer
IXYS
Series
Linear L2™r
Datasheet
1.IXTP15N50L2.pdf
(5 pages)
Specifications of IXTP15N50L2
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
480 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
123nC @ 10V
Input Capacitance (ciss) @ Vds
4080pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
15
Rds(on), Max, Tj=25°c, (?)
0.480
Ciss, Typ, (pf)
4080
Qg, Typ, (nc)
123
Trr, Typ, (ns)
570
Pd, (w)
300
Rthjc, Max, (k/w)
0.42
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
10
18
16
14
12
10
45
40
35
30
25
20
15
10
8
6
4
2
0
5
0
0.50
3.0
0
f
3.5
0.55
= 1 MHz
5
4.0
Fig. 9. Forward Voltage Drop of
0.60
10
T
Fig. 7. Input Admittance
4.5
J
0.65
= 125ºC
Fig. 11. Capacitance
5.0
Intrinsic Diode
15
0.70
V
V
V
SD
DS
GS
5.5
- Volts
- Volts
- Volts
0.75
20
T
J
6.0
= 125ºC
- 40ºC
0.80
25ºC
25
6.5
0.85
T
C iss
C oss
C rss
7.0
J
30
= 25ºC
0.90
7.5
35
0.95
8.0
1.00
8.5
40
1.000
0.100
0.010
12
11
10
16
14
12
10
0.0001
9
8
7
6
5
4
3
2
1
0
8
6
4
2
0
0
0
V
I
I
2
D
G
20
DS
Fig. 12. Maximum Transient Thermal
= 7.5A
= 10mA
= 250V
0.001
4
40
Fig. 8. Transconductance
6
Fig. 10. Gate Charge
Q
Pulse Width - Seconds
60
G
I
- NanoCoulombs
D
0.01
Impedance
8
- Amperes
80
10
100
0.1
12
IXTH15N50L2
IXTP15N50L2
T
120
J
= - 40ºC
14
140
16
1
125ºC
25ºC
160
18
180
20
10