IXTV110N25TS IXYS, IXTV110N25TS Datasheet

MOSFET N-CH 250V 110A PLUS220SMD

IXTV110N25TS

Manufacturer Part Number
IXTV110N25TS
Description
MOSFET N-CH 250V 110A PLUS220SMD
Manufacturer
IXYS
Datasheet

Specifications of IXTV110N25TS

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
24 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
110A
Vgs(th) (max) @ Id
4.5V @ 1mA
Gate Charge (qg) @ Vgs
157nC @ 10V
Input Capacitance (ciss) @ Vds
9400pF @ 25V
Power - Max
694W
Mounting Type
Surface Mount
Package / Case
PLUS-220SMD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.024 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
110 A
Power Dissipation
694 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
110
Rds(on), Max, Tj=25°c, (?)
0.024
Ciss, Typ, (pf)
9400
Qg, Typ, (nc)
157
Trr, Typ, (ns)
170
Trr, Max, (ns)
-
Pd, (w)
694
Rthjc, Max, (k/w)
0.18
Package Style
PLUS220SMD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Trench Gate
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
I
E
dV/dt
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
LRMS
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C unless otherwise specified)
Continuous
T
T
Transient
T
Lead Current Limit, RMS
T
T
T
I
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-247)
Mounting force (PLUS220)
TO-247
PLUS220
V
V
V
V
V
V
Test Conditions
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ± 20V, V
= V
= 0V
= 10V, I
DM
, V
GS
DSS
, I
DD
D
D
D
≤ V
= 250μA
= 1mA
= 0.5 • I
DS
DSS
= 0V
, T
D25
J
GS
≤ 150°C
, Notes 1, 2
= 1MΩ
T
J
= 125°C
JM
IXTH110N25T
IXTV110N25TS
11..65 / 2.5..14.6
Characteristic Values
-55 ... +150
-55 ... +150
Min.
250
2.5
Maximum Ratings
1.13 / 10
± 20
± 30
250
250
110
300
694
150
300
260
Typ.
75
25
10
1
6
4
± 200 nA
Nm/lb.in.
Max.
250 μA
4.5
24 mΩ
5 μA
V/ns
N/lb.
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
g
g
J
V
V
TO-247 (IXTH)
PLUS220SMD (IXTV_S)
G = Gate
S = Source
Features
Advantages
Applications
V
I
R
D25
International standard packages
Avalanche rated
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor drives
Uninterruptible power supplies
Easy to mount
Space savings
High power density
DS(on)
DSS
G
G
= 250V
= 110A
≤ ≤ ≤ ≤ ≤
D
S
S
D
TAB = Drain
24mΩ Ω Ω Ω Ω
= Drain
DS99904A(08/08)
D (TAB)
D (TAB)

Related parts for IXTV110N25TS

IXTV110N25TS Summary of contents

Page 1

... ± 20V GSS DSS DS DSS 0.5 • 10V, I DS(on D25 © 2008 IXYS CORPORATION, All rights reserved IXTH110N25T IXTV110N25TS Maximum Ratings 250 = 1MΩ 250 GS ± 20 ± 30 110 75 300 ≤ 150° 694 -55 ... +150 150 -55 ... +150 300 260 1. 11..65 / 2.5..14 Characteristic Values Min ...

Page 2

... D 50 0.18 °C/W 0.25 Characteristic Values Min. Typ. JM 170 2.3 27 Kelvin test contact location must be DS(on) 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTH110N25T IXTV110N25TS TO-247AD Outline Max Terminals Gate 3 - Source nC Dim. Millimeter Min 4 2 2.2 ...

Page 3

... Junction Temperature 3.0 2 10V GS 2.6 2.4 2.2 2 110A D 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature 90 External Lead Current Limit -50 - Degrees Centigrade C IXTH110N25T IXTV110N25TS 55A Value 55A D 75 100 125 150 75 100 125 150 ...

Page 4

... I - Amperes D Fig. 10. Gate Charge 125V 25A 10mA NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 1.00 0.10 0.01 0.00 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXTH110N25T IXTV110N25TS 40ºC J 25ºC 125ºC 100 120 140 160 100 120 140 160 0 ...

Page 5

... T = 25º 125º 100 110 120 IXTH110N25T IXTV110N25TS Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Ω 15V 125V Amperes D Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature - - - - d(off Ω 15V 125V 55A 110A Degrees Centigrade J Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance ...

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