IXFH6N100 IXYS, IXFH6N100 Datasheet

MOSFET N-CH 1KV 6A TO-247AD

IXFH6N100

Manufacturer Part Number
IXFH6N100
Description
MOSFET N-CH 1KV 6A TO-247AD
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFH6N100

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
4.5V @ 2.5mA
Gate Charge (qg) @ Vgs
130nC @ 10V
Input Capacitance (ciss) @ Vds
2600pF @ 25V
Power - Max
180W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2 Ohms
Forward Transconductance Gfs (max / Min)
6 s
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6 A
Power Dissipation
180 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
60 ns
Minimum Operating Temperature
- 55 C
Rise Time
40 ns
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
6
Rds(on), Max, Tj=25°c, (?)
2
Ciss, Typ, (pf)
2600
Qg, Typ, (nc)
88
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
179
Rthjc, Max, (ºc/w)
0.70
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IXFH6N100
Manufacturer:
IXYS
Quantity:
30 000
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IXFH6N100
Manufacturer:
IXYS
Quantity:
35 500
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IXFH6N100F
Manufacturer:
IXYS
Quantity:
15 500
Price:
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
M
Weight
N-Channel Enhancement Mode
High dv/dt, Low t
Symbol
V
V
I
I
R
© 2000 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions, and dimensions.
D25
DM
AR
GSS
DSS
HiPerFET
Power MOSFETs
JM
stg
L
DSS
DGR
GSM
AR
D
J
GS
d
DSS
GS(th)
DS(on)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Test Conditions
V
V
V
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
S
V
C
C
C
C
C
J
J
J
DS
DS
GS
GS
GS
GS
£ 150°C, R
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
£ I
= 25°C
= 0 V, I
= V
= ±20 V
= 0.8 • V
= 0 V
= 10 V, I
DM
, di/dt £ 100 A/ms, V
TM
GS
rr
, HDMOS
, I
D
D
DC
D
DSS
= 3 mA
= 2.5 mA
G
, V
= 0.5 • I
= 2 W
DS
= 0
D25
TM
GS
= 1 MW
Family
DD
T
T
J
J
£ V
= 25°C
= 125°C
(T
6N100
6N100
DSS
J
6N90
6N90
= 25°C, unless otherwise specified)
JM
,
TO-204 = 18 g, TO-247 = 6 g
6N90
6N100
IXFH/IXFM 6 N90
IXFH/IXFM 6 N100
1000
min.
900
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.13/10
1000
900
±20
±30
180
150
300
24
18
6
6
5
max.
±100
250
4.5
1.8
2.0
Nm/lb.in.
1
V/ns
mJ
mA
°C
°C
°C
°C
nA
mA
W
V
V
V
V
A
A
A
W
W
V
V
V
Features
• International standard packages
• Low R
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw (TO-247)
• Space savings
• High power density
TO-247 AD (IXFH)
TO-204 AA (IXFM)
G = Gate,
S = Source,
rated
- easy to drive and to protect
1000 V
power supplies
(isolated mounting screw hole)
900 V
V
t
rr
DSS
DS (on)
£ 250 ns
HDMOS
D
D = Drain,
TAB = Drain
6 A
6 A
I
D25
TM
G
process
91529E(10/95)
(TAB)
R
1.8 W
2.0 W
DS(on)
1 - 4

Related parts for IXFH6N100

IXFH6N100 Summary of contents

Page 1

... DSS DS DSS 0.5 • I DS(on Pulse test, t £ 300 ms, duty cycle d £ IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXFH/IXFM 6 N90 IXFH/IXFM 6 N100 TM Family Maximum Ratings 6N90 900 = 1 MW 6N100 1000 GS ±20 ± ...

Page 2

... 25°C 0 125°C 1 25°C 7 125°C 9.0 J IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXFH 6N90 IXFH 6N100 IXFM 6N90 IXFM 6N100 TO-247 AD (IXFH) Outline 100 ns 110 ns ...

Page 3

... V = 10V GS 2 2.0 1 Amperes D Fig. 5 Drain Current vs. Case Temperature -50 - Degrees C C © 2000 IXYS All rights reserved = 10V 15V 8 10 6N90 6N100 75 100 125 150 IXFH 6N90 IXFH 6N100 IXFM 6N90 IXFM 6N100 Fig. 2 Input Admittance 25° 125° 55°C J ...

Page 4

... Fig.11 Transient Thermal Impedance 1.000 D=0.5 D=0.2 0.100 D=0.1 D=0.05 D=0.02 D=0.01 0.010 Single Pulse 0.001 0.00001 0.0001 © 2000 IXYS All rights reserved 0.001 0.01 Time - Seconds IXFH 6N90 IXFH 6N100 IXFM 6N90 IXFM 6N100 Fig.8 Forward Bias Safe Operating Area ...

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