STW29NK50Z STMicroelectronics, STW29NK50Z Datasheet

MOSFET N-CH 500V 31A TO-247

STW29NK50Z

Manufacturer Part Number
STW29NK50Z
Description
MOSFET N-CH 500V 31A TO-247
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STW29NK50Z

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
130 mOhm @ 15.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
31A
Vgs(th) (max) @ Id
4.5V @ 150µA
Gate Charge (qg) @ Vgs
266nC @ 10V
Input Capacitance (ciss) @ Vds
6110pF @ 25V
Power - Max
350W
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.13 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
24 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
31 A
Power Dissipation
350000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
15.5A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
105mohm
Rds(on) Test Voltage Vgs
30V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4425-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STW29NK50Z
Manufacturer:
IXYS
Quantity:
30 000
Part Number:
STW29NK50Z
Manufacturer:
ST
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Part Number:
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Manufacturer:
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Quantity:
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Part Number:
STW29NK50ZD
Manufacturer:
ST
Quantity:
4 500
October 2004
Table 1: General Features
I
I
I
I
I
I
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability
for the most demanding application. Such series
complements ST full range of high vltage MOS-
FETs including revolutionary MDmesh™ products.
APPLICATIONS
I
I
I
I
Table 2: Order Codes
STW29NK50Z
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES
WELDING MACHINES
LIGHTING
TYPE
PART NUMBER
STW29NK50Z
DS
(on) = 0.105 Ω
500 V
V
DSS
< 0.13 Ω
R
DS(on)
W29NK50Z
MARKING
N-CHANNEL 500 V - 0.105Ω - 31A TO-247
Zener-Protected SuperMESH™ MOSFET
31 A
I
D
350 W
P
W
Figure 1: Package
Figure 2: Internal Schematic Diagram
PACKAGE
TO-247
STW29NK50Z
TO-247
PACKAGING
1
TUBE
2
Rev. 1
3
1/10

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STW29NK50Z Summary of contents

Page 1

... WELDING MACHINES I LIGHTING I Table 2: Order Codes PART NUMBER STW29NK50Z October 2004 N-CHANNEL 500 V - 0.105Ω - 31A TO-247 Zener-Protected SuperMESH™ MOSFET Figure 1: Package I P DS(on 350 W Figure 2: Internal Schematic Diagram MARKING PACKAGE W29NK50Z STW29NK50Z 1 TO-247 PACKAGING TO-247 3 2 TUBE Rev. 1 1/10 ...

Page 2

... STW29NK50Z Table 3: Absolute Maximum ratings Symbol V Drain-source Voltage ( Drain-gate Voltage (R DGR V Gate- source Voltage GS I Drain Current (continuous Drain Current (continuous (*) Drain Current (pulsed Total Dissipation at T TOT Derating Factor V Gate source ESD (HBM-C = 100pF 1.5 KΩ) ESD(G-S) dv/dt (1) Peak Diode Recovery voltage slope ...

Page 3

... Test Conditions di/dt = 100 A/µ 44.8V 25° (see test circuit Figure di/dt = 100 A/µ 44.8V 150° (see test circuit Figure 5) STW29NK50Z Min. Typ. 500 = 125°C 3 3.75 0.105 Min. Typ 6110 GS 697 166 44.5 41 129 33 190 35.5 111 Min. Typ. ...

Page 4

... STW29NK50Z Figure 3: Safe Operating Area Figure 4: Output Characteristics Figure 5: Transconductance 4/10 Figure 6: Thermal Impedance Figure 7: Transfer Characteristics Figure 8: Static Drain-source On Resistance ...

Page 5

... Figure 9: Gate Charge vs Gate-source Voltage Figure 10: Normalized Gate Thereshold Volt- age vs Temperature Figure 11: Dource-Drain Diode Forward Char- acteristics Figure 12: Capacitance Variations Figure 13: Normalized On Resistance vs Tem- perature Figure 14: Normalized BV DSS STW29NK50Z vs Temperature 5/10 ...

Page 6

... STW29NK50Z Figure 15: Maximum Avalanche Energy vs Temperature 6/10 ...

Page 7

... Figure 16: Unclamped Inductive Load Test Cir- cuit Figure 17: Switching Times Test Circuit For Resistive Load Figure 18: Test Circuit For Inductive Load Switching and Diode Recovery Times Figure 19: Unclamped Inductive Wafeform Figure 20: Gate Charge Test Circuit STW29NK50Z 7/10 ...

Page 8

... STW29NK50Z DIM. MIN. A 4.85 A1 2.20 b 1.0 b1 2.0 b2 3.0 c 0.40 D 19.85 E 15. 14.20 L1 3.70 L2 øP 3.55 øR 4.50 S 8/10 TO-247 MECHANICAL DATA mm. TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 5.45 14.80 4.30 18.50 3.65 5.50 5.50 inch MIN. TYP. ...

Page 9

... Table 10: Revision History Date Revision 19-Oct-2004 1 Description of Changes First Release. STW29NK50Z 9/10 ...

Page 10

... STW29NK50Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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