STW29NK50Z STMicroelectronics, STW29NK50Z Datasheet - Page 2

• Manufacturer Part Number: STW29NK50Z
• Description: MOSFET N-CH 500V 31A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STW29NK50Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 15.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 31A
• Vgs(th) (max) @ Id: 4.5V @ 150µA
• Gate Charge (qg) @ Vgs: 266nC @ 10V
• Input Capacitance (ciss) @ Vds: 6110pF @ 25V
• Power - Max: 350W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.13 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 24 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 31 A
• Power Dissipation: 350000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 15.5A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 105mohm
• Rds(on) Test Voltage Vgs: 30V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4425-5

STW29NK50Z
Table 3: Absolute Maximum ratings
(*) Pulse width limited by safe operating area
(1) I
Table 4: Thermal Data
Table 5: Avalanche Characteristics
Table 6: Gate-Source Zener Diode
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/10
V
Rthj-case
Rthj-amb
dv/dt (1)
Symbol
Symbol
Symbol
SD
BV
ESD(G-S)
I
V
DM
P
V
V
E
T
I
≤ 31 A, di/dt ≤ 200 A/µs, V
DGR
I
I
TOT
AR
T
T
stg
GS
GSO
DS
AS
D
D
j
l
(*)
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Gate-Source Breakdown
Voltage
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Gate source ESD (HBM-C = 100pF, R = 1.5 KΩ)
Peak Diode Recovery voltage slope
Storage Temperature
Operating Junction Temperature
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
Parameter
j
= 25 °C, I
DD
≤ V
(BR)DSS
D
C
GS
= I
Parameter
= 25°C
Parameter
GS
j
= 20 KΩ)
AR
max)
, T
= 0)
, V
J
Igs= ±
≤ T
DD
C
C
= 25°C
= 100°C
JMAX
= 50 V)
Test Condition
1mA (Open Drain)
Min.
30
Max Value
-55 to 150
Value
6000
± 30
19.5
2.77
0.36
500
500
124
350
300
550
Typ.
4.5
31
50
31
Max
W/°C
°C/W
°C/W
V/ns
Unit
Unit
Unit
mJ
°C
°C
W
A
A
V
V
V
A
A
A
V