IXFH40N30 IXYS, IXFH40N30 Datasheet - Page 2
![MOSFET N-CH 300V 40A TO-247AD](/photos/5/30/53063/to-247ad_sml.jpg)
IXFH40N30
Manufacturer Part Number
IXFH40N30
Description
MOSFET N-CH 300V 40A TO-247AD
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFH40N30.pdf
(4 pages)
Specifications of IXFH40N30
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
85 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
40A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
200nC @ 10V
Input Capacitance (ciss) @ Vds
4800pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.085 Ohms
Forward Transconductance Gfs (max / Min)
25 s
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
40 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
40
Rds(on), Max, Tj=25°c, (?)
0.085
Ciss, Typ, (pf)
4800
Qg, Typ, (nc)
177
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
298
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH40N30
Manufacturer:
IXYS
Quantity:
2 000
Company:
Part Number:
IXFH40N30
Manufacturer:
SAKNEN
Quantity:
4 000
Company:
Part Number:
IXFH40N30Q
Manufacturer:
AD
Quantity:
3 340
Company:
Part Number:
IXFH40N30Q
Manufacturer:
IXYS
Quantity:
3 500
© 2000 IXYS All rights reserved
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
S
SM
d(on)
d(off)
f
r
rr
fs
SD
oss
thJC
thCK
iss
rss
g(on)
gs
gd
Test Conditions
V
Test Conditions
V
Repetitive;
pulse width limited by T
I
Pulse test, t £ 300 ms, duty cycle d £ 2 %
I
V
F
F
DS
GS
R
= I
= I
= 100 V
S
= 0 V
S
= 10 V; I
V
V
R
V
, -di/dt = 100 A/ms,
, V
GS
GS
GS
G
= 2 W (External)
GS
= 0 V, V
= 10 V, V
= 10 V, V
= 0 V,
D
= 0.5 I
DS
DS
DS
= 25 V, f = 1 MHz
D25
= 0.5 • V
= 0.5 • V
JM
, pulse test
35N30
40N30
35N30
40N30
T
T
J
J
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
DSS
DSS
(T
(T
=
= 125°C
, I
, I
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
D
D
25°C
= 0.5 I
= 0.5 I
4,881,106
4,931,844
D25
D25
min.
min.
22
Characteristic Values
Characteristic Values
5,017,508
5,034,796
4800
typ.
typ.
0.25
745
280
177
25
20
60
75
45
28
78
0.42
max.
max.
100
200
105
30
90
90
50
140
160
200 ns
350 ns
5,049,961
5,063,307
1.5
35
40
K/W
K/W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
A
S
A
A
A
V
IXFH 35N30
IXFM 35N30
5,187,117
5,237,481
TO-204 AE (IXFM) Outline
TO-247 AD (IXFH) Outline
5,486,715
5,381,025
Dim.
A
B
C
D
E
F
G
H
J
K
Q
R
Dim. Millimeter
A
B
C
D
E
F
G
H
J
K
L
M
N
38.61 39.12
30.15
10.67 11.17
16.64 17.14
11.18 12.19
25.16 26.66
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
15.75 16.26 0.610 0.640
6.40 11.40
1.45
1.52
5.21
3.84
Min.
Min. Max.
3.55 3.65 0.140 0.144
4.32 5.49 0.170 0.216
1.65 2.13 0.065 0.084
10.8 11.0 0.426 0.433
Millimeter
5.4
1.0
4.7
0.4
1.5 2.49 0.087 0.102
- 22.22
-
Max.
BSC
1.60
3.43
5.71
4.19
6.2 0.212 0.244
4.5 -
1.4 0.040 0.055
5.3 0.185 0.209
0.8 0.016 0.031
IXFH 40N30
IXFM 40N30
1.520 1.540
0.252 0.449
0.057 0.063
0.060 0.135
1.187
0.420 0.440
0.205 0.225
0.655 0.675
0.440 0.480
0.151 0.165
0.991 1.050
Min.
Min.
Inches
Inches
- 0.875
0.177
Max.
Max.
BSC
2 - 4