STW43NM60N STMicroelectronics, STW43NM60N Datasheet - Page 8

• Manufacturer Part Number: STW43NM60N
• Description: MOSFET N-CH 600V 35A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW43NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 88 mOhm @ 17.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 4200pF @ 50V
• Power - Max: 255W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.088 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 35 A
• Power Dissipation: 255 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 17.5A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 75mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8460-5

Test circuits
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Figure 14. Switching times test circuit for
Figure 16. Test circuit for inductive load
Figure 18. Unclamped inductive waveform
Test circuits
resistive load
switching and diode recovery times
Figure 15. Gate charge test circuit
Figure 17. Unclamped inductive load test
Figure 19. Switching time waveform
circuit
STW43NM60N