STP30NM60N STMicroelectronics, STP30NM60N Datasheet - Page 5

• Manufacturer Part Number: STP30NM60N
• Description: MOSFET N-CH 600V 25A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP30NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 12.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 91nC @ 10V
• Input Capacitance (ciss) @ Vds: 2700pF @ 50V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8447-5

STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
d(on)
d(off)
SD
RRM
RRM
I
Q
Q
SD
t
t
t
t
rr
rr
r
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
V
R
(see Figure 18)
I
I
V
I
V
(see Figure 23)
SD
SD
SD
DD
G
DD
DD
= 4.7 Ω, V
= 25 A, V
= 25 A, di/dt = 100 A/µs
= 25 A, di/dt = 100 A/µs
= 100 V
= 100 V Tj = 150°C
= 300 V, I
Test conditions
Test conditions
(see Figure 23)
GS
GS
D
= 12.5 A,
= 0
= 10 V
Electrical characteristics
Min.
Min
Typ.
Typ.
540
630
125
10
36
12
36
20
24
70
Max Unit
Max Unit
100
1.3
25
µC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
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