IXTH30N60L2 IXYS, IXTH30N60L2 Datasheet - Page 5

• Manufacturer Part Number: IXTH30N60L2
• Description: MOSFET N-CH 30A 600V TO-247
• Manufacturer: IXYS
• Series: Linear L2™r

Specifications of IXTH30N60L2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 240 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 335nC @ 10V
• Input Capacitance (ciss) @ Vds: 10700pF @ 25V
• Power - Max: 540W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 30
• Rds(on), Max, Tj=25°c, (?): 0.24
• Ciss, Typ, (pf): 10700
• Qg, Typ, (nc): 335
• Trr, Typ, (ns): 710
• Pd, (w): 540
• Rthjc, Max, (k/w): 0.23
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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100.0
10.0
1.0
0.1
10
R
DS(on)
T
T
Single Pulse
Fig. 13. Forward-Bias Safe Operating Area
J
C
= 150ºC
= 25ºC
Limit
V
@ T
DS
- Volts
C
100
= 25ºC
DC
25µs
100µs
1ms
10ms
100ms
1000
100.0
10.0
1.0
0.1
10
R
DS(on)
Fig. 14. Forward-Bias Safe Operating Area
T
T
Single Pulse
J
C
= 150ºC
= 75ºC
Limit
IXTH30N60L2 IXTQ30N60L2
@ T
V
DS
- Volts
C
100
= 75ºC
IXTT30N60L2
IXYS REF: T_30N60L2(8R)01-20-09-A
DC
25µs
100µs
1ms
10ms
100ms
1000