IXFK64N50P IXYS, IXFK64N50P Datasheet - Page 4

• Manufacturer Part Number: IXFK64N50P
• Description: MOSFET N-CH 500V 64A TO-264
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFK64N50P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 85 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 64A
• Vgs(th) (max) @ Id: 5.5V @ 8mA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 8700pF @ 25V
• Power - Max: 830W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.085 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 50 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 64 A
• Power Dissipation: 830000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 64
• Rds(on), Max, Tj=25°c, (?): 0.085
• Ciss, Typ, (pf): 9700
• Qg, Typ, (nc): 150
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 830
• Rthjc, Max, (ºc/w): 0.15
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
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75
50
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0
0
10
3.5
0.4
0
f = 1MH z
5
T
4
J
0.6
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
Fig. 9. Sour ce Cur re nt vs .
= 125ºC
Source -To-Drain V oltage
10
4.5
T
J
V
V
0.8
15
= 125ºC
G S
V
S D
-40ºC
D S
25ºC
- V olts
- V olts
5
20
- V olts
T
J
= 25ºC
1
25
5.5
30
1.2
C is s
C os s
C rss
6
35
6.5
1.4
40
1.00
0.10
0.01
80
70
60
50
40
30
20
10
10
0
9
8
7
6
5
4
3
2
1
0
Fig. 12. M axim um Tr ans ie nt The r m al
0
0
1
V
I
I
D
G
DS
20
= 32A
= 10m A
20
Fig. 8. Trans conductance
= 250V
Fig. 10. Gate Char ge
Pulse Width - milliseconds
40
40
T
Q
J
Re s is tance
= -40ºC
G
10
125ºC
I
60
25ºC
- nanoCoulombs
D
60
- A mperes
80
80
100
IXFK 64N50P
IXFX 64N50P
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