IXFK44N60 IXYS, IXFK44N60 Datasheet - Page 4

• Manufacturer Part Number: IXFK44N60
• Description: MOSFET N-CH 600V 44A TO-264AA
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFK44N60

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 44A
• Vgs(th) (max) @ Id: 4.5V @ 8mA
• Gate Charge (qg) @ Vgs: 330nC @ 10V
• Input Capacitance (ciss) @ Vds: 8900pF @ 25V
• Power - Max: 560W
• Mounting Type: Through Hole
• Package / Case: TO-264AA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.13 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 45 s
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 44 A
• Power Dissipation: 560000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 44
• Rds(on), Max, Tj=25°c, (?): 0.13
• Ciss, Typ, (pf): 8900
• Qg, Typ, (nc): 330
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 568
• Rthjc, Max, (ºc/w): 0.22
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2000 IXYS All rights reserved
100
Figure 9. Forward Voltage Drop of the Intrinsic Diode
80
60
40
20
12
10
0
Figure 7. Gate Charge
8
6
4
2
0
0.2
1.00
0.10
0.01
0.00
Figure 10. Transient Thermal Resistance
0
10
-4
50 100 150 200 250 300 350 400
V
0.4
DS
I
I
D
G
= 30A
= 10mA
= 300V
Gate Charge - nC
T
J
0.6
V
= 125
SD
- Volts
O
C
10
-3
0.8
1.0
T
J
= 25
O
C
Pulse Width - Seconds
10
1.2
-2
10
10000
Figure 8. Capacitance Curves
1000
-1
100
0
5
10
10
0
15
V
DS
- Volts
20
Ciss
25
Crss
Coss
f = 1MHz
30
10
IXFK 44N60
IXFX 44N60
1
35
40
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